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A method for preparing c-axis oriented aluminum nitride film on the surface of titanium alloy substrate

A technology of titanium alloy and aluminum nitride, applied in the field of thin film material preparation, can solve the problems of low surface roughness, low reliability and short life, and achieve the effect of good piezoelectric effect and low surface roughness

Inactive Publication Date: 2015-12-30
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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Problems solved by technology

[0004] In order to solve the problems of low reliability and short service life of the surface acoustic wave sensor made of single crystal piezoelectric bulk material for measuring the stress and temperature changes of titanium alloy, if the high (002) axis orientation and low surface area can be directly deposited on the surface of titanium alloy The aluminum nitride piezoelectric sensitive thin film with roughness is expected to solve the reliability problem of aluminum nitride thin film surface acoustic wave devices in the application of aviation and aerospace fields

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  • A method for preparing c-axis oriented aluminum nitride film on the surface of titanium alloy substrate
  • A method for preparing c-axis oriented aluminum nitride film on the surface of titanium alloy substrate
  • A method for preparing c-axis oriented aluminum nitride film on the surface of titanium alloy substrate

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Embodiment Construction

[0022] The present invention will be further described below in conjunction with accompanying drawing:

[0023] A method for preparing a C-axis orientation aluminum nitride film on the surface of a titanium alloy substrate, comprising the following steps:

[0024] a. First, clean the TC4 titanium alloy substrate roughly polished by polishing paste with ultrasonic waves, then use acetone, alcohol, and deionized water to clean the substrate in turn, and blow it dry with nitrogen gas. Put the cleaned substrate into a drying oven filled with pure nitrogen gas. Heat to 120°C in a dry box and dry for 1 hour to remove moisture on the surface of the substrate. Prevent stains and moisture from affecting the quality of the grown film.

[0025] b. Place the cleaned and dried substrate on the substrate stage of the intermediate frequency magnetron sputtering apparatus with a clamp, and then close the cavity. Start the magnetron sputtering instrument normally, and evacuate the cavity to ...

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Abstract

The invention discloses a method for preparing a C-axis oriented aluminum nitride film on the surface of a titanium alloy substrate, belonging to the technical field of film material preparation. First, the surface of the titanium alloy substrate is polished to reduce its surface roughness as much as possible; then a layer of aluminum nitride is pre-sputtered in the substrate temperature range of 350-450°C by magnetron reactive sputtering, and nitrogen is pre-sputtered. After the thickness of aluminum oxide exceeds the surface roughness of the titanium alloy substrate, the temperature of the titanium alloy substrate is naturally lowered to 120-150°C, and aluminum nitride is continuously deposited by sputtering until the aluminum oxide film reaches the required thickness. The present invention successfully prepares a C-axis-oriented aluminum nitride film on the surface of a titanium alloy substrate. The film has a high degree of C-axis orientation, low surface roughness and good piezoelectric effect. The surface wave device is directly made on the surface of the titanium alloy material to provide a material basis, and it provides a possibility for the high reliability application of the aluminum nitride thin film surface acoustic wave sensor in the field of aviation and aerospace.

Description

technical field [0001] The invention belongs to the technical field of thin film material preparation, and relates to an aluminum nitride thin film preparation process and a thin film surface acoustic wave sensor technology, in particular to a method for preparing an orientation aluminum nitride thin film on the surface of a titanium alloy. Background technique [0002] Aluminum nitride is a typical wide bandgap III-V compound with a series of excellent physical and chemical properties: good chemical stability, high hardness, high piezoelectric coefficient, high thermal conductivity, low thermal expansion coefficient, wide straight bandgap width, Sound waves travel fast. In the field of surface acoustic wave devices, with the rapid development of wireless communication systems and data transmission technologies, surface acoustic wave devices have developed to frequency bands above GHz, and aluminum nitride films have the highest performance among all inorganic non-stick piez...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/35C23C14/06
Inventor 彭斌王瑜张万里李川刘兴钊
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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