Multistage resistive random access memory and manufacturing method thereof

Abstract

The invention aims to provide a multistage resistive random access memory and a manufacturing method of the multistage resistive random access memory. The multistage resistive random access memory comprises a substrate, a bottom electrode, a resistive layer and a top electrode, wherein the substrate, the bottom electrode, the resistive layer and the top electrode are arranged from bottom to top in sequence. The multistage resistive random access memory is characterized in that an isolation layer is further arranged between the bottom electrode and the resistive layer. According to the multistage resistive random access memory and the manufacturing method of the multistage resistive random access memory, the nanoscale isolation layer is additionally arranged, so that the magnitude of a storage window of the resistive random access memory is increased to over 105, and the primary condition needed by multistage storage is met; electrochemical active materials are used as the top electrode, different resistance states are achieved under the condition of different voltage drives through the drifting character of the electrochemical active materials, and the purpose of multistage storage is achieved; in addition, due to the additional arrangement of the isolation layer, dissipation of oxygen ions in the movement process is reduced, the bottom electrode is effectively protected, and the stability of a device is improved. In addition, the manufacturing method of the multistage resistive random access memory is simple and easy to control.

Description

technical field [0001] The invention belongs to the technical field of electronic materials and components, and relates to information storage technology, in particular to a multi-level resistive memory unit and a preparation method thereof. Background technique [0002] At present, the storage devices on the market mainly include magnetic memory and Flash memory, such as traditional computer hard disks, U disks, and solid-state hard disks. Resistive memory mainly refers to a new type of memory that uses the reversible change of the resistance state of the resistive layer of solid components to store relevant information. Although it has not yet entered the stage of commercial application, it has broad market prospects as a recognized next-generation non-volatile memory device. [0003] The structure of the resistive memory is a multi-layer thin film structure. Its basic structure is: bottom electrode / resistive layer / top electrode, such as figure 1 shown. When the voltage...

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Problems solved by technology

[0004] At present, the storage window (the ratio of high resistance to low resistance) of RRAM is generally within 10 2 -10 3 On the order of magnitude, while the storage circuit only has a storage window greater than 10 1 Therefore, the current RRAM is still a traditional two-level storage, that is, the storage state is only 0 and 1. This two-level storage mode limits the further improvement of storage density.

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