Light modulator with four-layer graphene structure
A layer graphene, light modulator technology, applied in the field of optoelectronics, can solve problems such as small switching time, achieve the effects of small capacitance and resistance, reduce volume, and shorten the length of the active region
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[0042] figure 1 It is a cross-sectional view of the optical modulator in the invention patent "Optical Modulator Including Graphene" (application number CN201210397252.3) filed by South Korea's Samsung Electronics Co., Ltd. in China in 2012. The length of its active area is 35μm, and the 3dB modulation bandwidth f3dB=55GHz.
[0043] figure 2 is a structural schematic diagram of the light modulator with four-layer graphene structure of the present invention. In this embodiment, light waves with a wavelength of 1.55 μm are used. The semiconductor substrate layer 11, the semiconductor optical waveguide layer 12, the first ridge 13, and the second ridge 14 are made of silicon (Si) material (refractive index 3.47), and the width of the first ridge 13 and the second ridge 14 is 0.4 μm, the thickness is 0.13 μm; the insulating layer 21, the first filling medium 22 and the second filling medium 23 are silicon dioxide (SiO 2 ) material (refractive index 1.444), the thickness of th...
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