Novel anti-SEU (Single Event Upset) reinforcement storage cell based on crossly-coupled miller capacitors

Abstract

The invention discloses a novel anti-SEU (Single Event Upset) reinforcement storage cell based on crossly-coupled miller capacitors. The novel anti-SEU reinforcement storage cell comprises a storage cell. The novel anti-SEU reinforcement storage cell is characterized in that the storage cell is a DICE (Dual Interlocked storage Cell); a miller capacitor is arranged between each two nodes in four nodes of the DICE. The novel anti-SEU reinforcement storage cell has the beneficial effects that the crossly-coupled miller capacitors are connected among the nodes of the DICE so as to obtain relatively great capacitance by using small capacitance. On the aspect of a circuit size, the area of the device can not be obviously increased by the miller capacitors so as to meet the requirement that the size of an integrated size is smaller and smaller. The crossly-coupled miller capacitors are additionally arranged so that the critical load of overturning the nodes is increased, the change of voltage of each node, caused by collection loads with the same quantity, is reduced, the feedback delaying time between two phase inverters of the DICE is increased, the multi-point anti-SEU reinforcement capability of the DICE is improved, and a possible inversion phenomenon caused by that the two nodes are simultaneously influenced by radiation effects is avoided.

Description

technical field [0001] The invention relates to a storage unit anti-SEU reinforcement design scheme, in particular to a novel storage unit based on cross-coupling Miller capacitance anti-SEU reinforcement. Background technique [0002] In the space radiation environment, the radiation effect will lead to the reduction of the life of the integrated circuit or the confusion of the data of the storage unit. According to different radiation mechanisms, the impact of space radiation on the integrated circuit can be divided into two categories, namely the total dose effect (Total Ionizing Dose, TID ) and Single Event Effect (Single Event Effect, SEE). Total dose effect (TID) is the result of long-term accumulation of a large number of particle radiation, leading to the gradual deterioration of the entire integrated circuit. The development of integrated circuit manufacturing process technology has basically solved the problem of TID. The single event effect (SEE) is the ionizati...

AI Technical Summary

Problems solved by technology

[0004] However, if two (or more) sensitive points in the DICE unit are reversed at the same time, the traditional DICE structure cannot automatically restore the original state, but will remain in the wrong state, which will lead to errors in stored data

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