A detection method for the aging degree of zinc oxide arrester resistors
A technology of aging degree and detection method, which is applied in the direction of measuring resistance/reactance/impedance, instruments, measuring devices, etc., can solve the problems of unknown factory value and difficulty in measuring the aging degree of zinc oxide arrester resistors, etc., and achieve high anti-aging performance , suitable for industrial applications
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Embodiment 1
[0039] Select a new zinc oxide arrester resistor (marked as 1#) and a zinc oxide arrester resistor (marked as 2#) after 2000 continuous 8 / 20μs lightning strikes. These two zinc oxide resistor samples are from the same manufacturer products of the same model. The peak value of the lightning impulse current experienced by resistor 2# is the nominal discharge current value specified in GB11032-2010. The resistor 2# is in the middle of aging, and the leakage current is 28μA, which is greater than the factory value (6μA). Cut 1# and 2# of zinc oxide resistors to be tested, the cutting method is as follows figure 1 shown. figure 2 It is the dielectric spectrum of a certain slice at low temperature. It can be observed that there are two loss peaks in the ε”~f characteristic curve. Calculated by the Arrhenius formula, for all slices of resistor 1# and 2#, the low frequency loss peak and the high frequency The relaxation activation energies of the loss peaks are about 0.35 eV and 0....
Embodiment 2
[0042] The zinc oxide surge arrester resistor sheet that has been in operation for 5 years in the substation is selected for illustration. The resistor is in the early stage of aging, the leakage current is 10μA, U 1mA The value (5.03kV) is close to the factory value (5.02kV). Cut the zinc oxide resistor, the cutting method is as follows figure 1 shown.
[0043] Calculated by the Arrhenius formula, it can be known that the relaxation activation energies of the low-frequency loss peak and high-frequency loss peak of all slices are about 0.37eV and 0.22kV, respectively, corresponding to the intrinsic defects of oxygen vacancies and zinc interstitials.
[0044] Figure 5 It is the peak change of the oxygen vacancy loss peak and the zinc interstitial loss peak obtained by comparing the ε”~f curve of the slice at -100°C. It can be seen that the oxygen vacancy defect concentration in the resistor chip at the initial aging stage is monotonous in the current direction increase, an...
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