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Preparation method of sapphire polishing solution

A technology of polishing liquid and sapphire, which is applied in the direction of polishing compositions containing abrasives, etc., can solve problems such as the difficulty in controlling the size of primary particles and secondary particles of alumina polishing liquid, and achieve high phase concentration, good suspension, and polishing defects. low effect

Active Publication Date: 2014-06-25
苏州柔陶新材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] The purpose of the present invention is to provide a preparation method of sapphire polishing liquid, which solves the technical problems that it is difficult to control the size of primary particles and secondary particles in alumina polishing liquid in the prior art when preparing alumina polishing liquid

Method used

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  • Preparation method of sapphire polishing solution
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  • Preparation method of sapphire polishing solution

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Embodiment 1

[0049] The preparation of embodiment 1 sapphire polishing liquid

[0050] Material formula

[0051]

[0052] Preparation steps:

[0053] (1) Nano α-Al 2 o3 (average particle size 100nm) aqueous dispersion (pH 4.0) was diluted with pure water to 25%wt aqueous dispersion, ultrasonicated or stirred evenly, used as seeds.

[0054] (2) Aluminum nitrate [Al(NO 3 ) 3 .9H 2 O] was dissolved in pure water to prepare an aluminum-containing solution with a concentration of 2mol / L, and urea was added to the aluminum nitrate solution to obtain an aluminum nitrate hydrolyzate.

[0055] (3) Based on alumina calculation, according to the alumina content ratio of 5:100, add the seeds into the aluminum-containing reaction solution, and stir vigorously to form a uniform aluminum-containing dispersion mixed solution.

[0056] (4) Spray-dry the aluminum-containing dispersion mixed solution at 200-220° C. to obtain a precursor of nano-alumina powder.

[0057] (5) Put the obtained precurso...

Embodiment 2

[0063] The preparation of embodiment 2 sapphire polishing liquid

[0064] Material formula

[0065]

[0066] Preparation steps:

[0067] (1) Nano α-Al 2 o 3 (average particle size 100nm) aqueous dispersion (pH 4.0) was diluted with pure water to 25%wt aqueous dispersion, ultrasonicated or stirred evenly, used as seeds.

[0068] (2) Aluminum sulfate [Al 2 (SO 4 ) 3 .18H 2 O] was dissolved in pure water to prepare an aluminum-containing reaction solution with a concentration of 1 mol / L.

[0069] (3) Based on alumina calculation, according to the alumina content ratio of 5:100, add the seeds into the aluminum-containing reaction solution, and stir vigorously to form a uniform aluminum-containing dispersion mixed solution.

[0070] (4) Spray-dry the aluminum-containing dispersion mixed solution at 200-220° C. to obtain a precursor of nano-alumina powder.

[0071] (5) Put the obtained precursor into a high-temperature furnace for heat treatment at 1150° C. for 90 minute...

Embodiment 3

[0077] The preparation of embodiment 3 sapphire polishing liquid

[0078] Material formula

[0079]

[0080] Preparation steps:

[0081] (1) Nano α-Al 2 o 3 (average particle size 100nm) aqueous dispersion (pH 4.0) was diluted with pure water to 25%wt aqueous dispersion, ultrasonicated or stirred evenly, used as seeds.

[0082] (2) Aluminum ammonium sulfate [NH 4 Al(SO 4 ) 2 .12H 2 O] was dissolved in pure water to prepare an aluminum-containing reaction solution with a concentration of 0.5 mol / L.

[0083] (3) Based on alumina calculation, according to the alumina content ratio of 5:100, add the seeds into the aluminum-containing reaction solution, and stir vigorously to form a uniform aluminum-containing dispersion mixed solution.

[0084] (4) Spray-dry the aluminum-containing dispersion mixed solution at 200-220° C. to obtain a precursor of nano-alumina powder.

[0085] (5) Put the obtained precursor into a high-temperature furnace for heat treatment at 1200° C. ...

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Abstract

The invention discloses a preparation method of a sapphire polishing solution. The preparation method is characterized by comprising the following steps: (1) uniformly dispersing alpha-Al2O3 nano-crystals which have average particle size in the range of 100-300nm and are taken as crystal seeds in an aluminum salt water solution as a precursor solution; (2) preparing the precursor solution into spherical powder containing the crystal seeds of the alpha-Al2O3 nano-crystals as a precursor by virtue of a spray drying process; (3) sintering the precursor by controlling the temperature range within 900-1200 DEG C to obtain alpha-Al2O3 powder; (4) dispersing the alpha-Al2O3 powder into water, and adjusting the pH value and size of secondary particles to obtain the sapphire polishing solution. According to the preparation method disclosed by the invention, the obtained sapphire polishing solution has the advantages of small average particle size, narrow particle size distribution, good water dispersibility, wide and adjustable range of process parameters and capability of greatly improving the efficiency and the precision of sapphire polishing.

Description

technical field [0001] The invention belongs to the technical field of sapphire processing, and in particular relates to a preparation method of a sapphire polishing liquid. Background technique [0002] The hardness of sapphire crystal is very high, with a Mohs hardness of 9, second only to diamond. It has good light transmission, thermal conductivity and electrical insulation, good mechanical and mechanical properties, and has the characteristics of wear resistance and wind erosion resistance. The melting point of sapphire crystal is 2050°C, the boiling point is 3500°C, and the maximum working temperature can reach 1900°C. Sapphire crystals still have good stability at high temperatures, and have good transmittance in the visible and infrared ranges, so they are widely used in optoelectronics, communications, and national defense fields such as LEDs and mobile phones. The above application fields require sapphire to have good surface processing accuracy and surface integ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09G1/02
Inventor 王宇湖张秀丽刘亚何晓敏沈从九
Owner 苏州柔陶新材料有限公司
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