Resistive random access memory structure and preparation method thereof

Abstract

The invention provides a resistive random access memory structure and a preparation method thereof. A bottom electrode and / or a top electrode of the resistive random access memory structure are / is graphene. The invention also provides a preparation method of the resistive random access memory structure. The preparation method comprises the step of preparing the bottom electrode and / or the top electrode of the resistive random access memory structure from graphene. The bottom electrode and / or the top electrode of the resistive random access memory structure provided by the invention are / is made of large-area graphene instead of traditional metal, and therefore, compared with a traditional metal / oxide / metal device, a graphene-contained resistive random access memory device with the resistive random access memory structure has the advantages that the starting and stopping power consumptions can be respectively greatly reduced, and the performances on the aspects of switch ratio, cycle frequency and the like are kept equivalent. A transparent and bendable flexible resistive random access memory structure with ultra-low power consumption can be obtained through preparing the device structure on a transparent flexible polyethylene naphthalate substrate.

Description

technical field [0001] The invention relates to a resistive variable memory structure and a preparation method thereof, and belongs to the technical field of electronic component preparation. Background technique [0002] As a storage medium for data, memory is the memory core of modern computer systems. According to whether the stored information can still be saved after power failure, the memory can be divided into volatile type and non-volatile type. With the development direction of high density, low cost, low power consumption, fast read and write, high cycle times and high durability, non-volatile memory (NVM) occupies an increasingly important position in the market. Among them, silicon-based flash memory device has become the mainstream product of non-volatile memory due to its advantages of high density and low cost. However, the existing silicon-based flash memory technology has disadvantages such as low durability, low read and write speed, high operating voltag...

AI Technical Summary

Problems solved by technology

However, by adjusting the composition of the transition metal oxide, the concentration of oxygen vacancies in the oxide is relatively large, which will introduce new problems such as the decrease of the device switching ratio.

More importantly, the regulation of the composition of transition metal oxides is complicated and the reproducibility is not high, so it has not been widely studied and applied.

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