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Making method of form-adjustable Mo/Zn film

A thin film and morphology technology, which is applied in the field of preparing solar cell copper zinc tin sulfur compound precursors, can solve the problems of limited large-scale production, complexity, expensive equipment, etc., and achieve environmental protection in the preparation process, short production cycle and low production cost Effect

Inactive Publication Date: 2014-05-28
SHANGHAI UNIVERSITY OF ELECTRIC POWER
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Vacuum technology has the advantages of good film quality, but the equipment is expensive, complicated, and limited in large-scale production; while the electrodeposition method has the characteristics of simple process, cheap price, and can expand the area of ​​film formation

Method used

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  • Making method of form-adjustable Mo/Zn film

Examples

Experimental program
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Effect test

Embodiment 1

[0038] A method for preparing a Mo / Zn thin film with adjustable morphology, specifically comprising the steps of:

[0039] (1) Grind and polish a 1cm×1cm Mo sheet and make a Mo electrode;

[0040] (2) Prepare zinc chloride, potassium chloride and deionized water into a mixed aqueous solution containing zinc chloride and potassium chloride, adjust the pH value to 5 with boric acid, and use a three-electrode system, that is, use a platinum electrode as the counter electrode 1. The calomel electrode was used as the reference electrode and the Mo electrode was used as the working electrode. The Mo / Zn thin film was obtained by deposition at a constant potential of -1.3V for 1000s with an electrochemical workstation.

[0041] In the mixed aqueous solution containing zinc chloride and potassium chloride, the molar concentrations of zinc chloride are respectively 0.005mol / L, 0.01mol / L, 0.02mol / L, 0.04mol / L, 0.08mol / L, 0.12mol / L L, 0.15mol / L, 0.2mol / L and 0.4mol / L, the molar concentra...

Embodiment 2

[0045] A method for preparing a Mo / Zn thin film with adjustable morphology, comprising the steps of:

[0046] (1) Grind and polish a 1cm×1cm Mo sheet and make a Mo electrode;

[0047] (2), zinc chloride, potassium chloride, polyethylene glycol 6000 and deionized water were prepared into 3 parts of mixed aqueous solutions containing zinc chloride, polyethylene glycol 6000 and potassium chloride, and the pH value was adjusted with boric acid 5. Adopt a three-electrode system, that is, use a platinum electrode as a counter electrode, a calomel electrode as a reference electrode, and a Mo electrode as a working electrode, and use an electrochemical workstation to deposit a Mo / Zn film at a constant potential of -1.3V for 1000s;

[0048] Above-mentioned 3 parts contain in the mixed aqueous solution of zinc chloride, macrogol 6000 and potassium chloride, the molar concentration of zinc chloride is 0.02mol / L, and the molar concentration of potassium chloride is 0.25mol / L, poly The mo...

Embodiment 3

[0051] A method for preparing a Mo / Zn thin film with adjustable morphology, comprising the steps of:

[0052] (1) Grind and polish a 1cm×1cm Mo sheet and make a Mo electrode;

[0053] (2), zinc chloride, potassium chloride, polyethylene glycol 6000 and deionized water were prepared into 3 parts of mixed aqueous solutions containing zinc chloride, polyethylene glycol 6000 and potassium chloride, and the pH value was adjusted with boric acid 5. Adopt a three-electrode system, that is, use a platinum electrode as a counter electrode, a calomel electrode as a reference electrode, and a Mo electrode as a working electrode, and use an electrochemical workstation to deposit a Mo / Zn film at a constant potential of -1.3V;

[0054] Above-mentioned 3 parts contain in the mixed aqueous solution of zinc chloride, macrogol 6000 and potassium chloride, the molar concentration of zinc chloride is 0.12mol / L, and the molar concentration of potassium chloride is 2 mol / L, poly The molar concentr...

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Abstract

The invention discloses a making method of a form-adjustable Mo / Zn film. The method which adopts zinc chloride, boric acid, potassium chloride and polyethylene glycol 6000 as raw materials comprises the following steps: preparing a mixed aqueous solution with the molar concentrations of zinc chloride, potassium chloride and polyethylene glycol 6000 of 0.005-0.4mol / L, 0.1-2mol / L and 0-60mg / L respectively, adjusting the pH value of the mixed aqueous solution to 5-6 by boric acid, and carrying out constant potential deposition at a voltage of -1.2- -1.4V for 10-1000s by an electrochemical workstation through adopting a three-electrode system with a platinum electrode as a counter electrode, a calomel electrode as a reference electrode and an Mo electrode as a work electrode to obtain different forms of the Mo / Zn film with the thickness of 150nm-5mum. The making method of the solar cell predecessor Mo / Zn film has the advantages of low cost, short period, adjustable particle size, simple operation and the like.

Description

technical field [0001] The invention relates to a method for preparing a Mo / Zn thin film with adjustable morphology, which is a precursor for preparing solar cell copper-zinc-tin-sulfur compounds, and has important applications in the field of solar cell energy. Background technique [0002] Thin-film solar cells have attracted widespread attention in the field of solar cells due to their high absorption coefficient and low price. Compound thin-film solar cells represented by CdTe and copper indium gallium tin (CIGS) have an absorption coefficient as high as 104 cm-1 to 105 cm-1, a laboratory efficiency of 16.7% and 20.1% respectively, and a commercial efficiency of 12-13 %, are good thin-film batteries, but they face serious problems of Cd toxicity, scarcity of In and Ga resources. In recent years, a new generation of copper-zinc-tin-sulfur (hereinafter referred to as CZTS) or copper-zinc-tin-selenium (hereinafter referred to as CZTSe) thin-film solar cells has attracted w...

Claims

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Application Information

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IPC IPC(8): C25D3/22
Inventor 任平崔震
Owner SHANGHAI UNIVERSITY OF ELECTRIC POWER
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