Method for preparing graphene structure-like copper-indium-sulfur nanosheet array membrane

A nanosheet array, graphene technology, applied in metal material coating process, coating and other directions, can solve the problems of harsh production conditions, difficult to control, excessive impurities, etc., and achieve the effect of low price and high repeatability

Inactive Publication Date: 2014-05-28
SHANGHAI JIAO TONG UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] Aiming at the above-mentioned deficiencies in the prior art, the present invention proposes a method for preparing a graphene-like structure copper indium sulfur nanosheet array film, which solves the problem of current CuInS 2 Harsh production conditions, too many impurities, unstable product quality and difficult to control, etc., the method of the present invention is simple, low in cost, uniform in array, and the thickness of the prepared nanosheets is 2-8nm. The application in the field of new energy provides an effective way

Method used

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  • Method for preparing graphene structure-like copper-indium-sulfur nanosheet array membrane
  • Method for preparing graphene structure-like copper-indium-sulfur nanosheet array membrane

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Embodiment 1

[0032] This embodiment includes the following steps:

[0033] 1) Prepare 6mmol of cuprous chloride and 6mmol of indium chloride, add 10mL of triethanolamine, 8mL of acetone, and 8mL of sodium citrate solution (0.1mol / L) into the reaction kettle, and stir for 10min;

[0034] 2) Add 8mL of ammonia water (28-30%) to the above mixture, and stir for 10min;

[0035] 3) Finally, add 7.2mmol of sulfur source (the molar ratio of sulfur powder / thiourea is 2 / 1), add 10mL of hydrazine hydrate, and add water / ethylene glycol mixed solvent to make the reaction liquid reach 80% of the volume of the reactor;

[0036] 4) Insert the substrate (FTO conductive glass) into the reactor, and quickly pour in the prepared chemical reaction solution, and seal the reactor tightly. The temperature of the solvothermal reaction in a muffle furnace is 180° C., and the reaction time is 12 hours.

[0037] Such as Figure 1 ~ Figure 3 As shown, the CuInS prepared in this example 2 The nanosheet thin film ar...

Embodiment 2

[0039] This embodiment includes the following steps:

[0040] 1) Prepare 6mmol of cuprous chloride and 6mmol of indium chloride, add 10mL of triethanolamine, 8mL of acetone, and 8mL of sodium citrate solution (0.1mol / L) into the reaction kettle, and stir for 10min;

[0041] 2) Add 10mL of ammonia water (28-30%) to the above mixture, and stir for 10min;

[0042] 3) Finally, add 7.2mmol of sulfur source (the molar ratio of sulfur powder / thiourea is 2 / 1), add 10mL of hydrazine hydrate, and add water / ethylene glycol mixed solvent to make the reaction liquid reach 80% of the volume of the reactor;

[0043]4) Insert the substrate (FTO conductive glass) into the reactor, and quickly pour in the prepared chemical reaction solution, and seal the reactor tightly. The temperature of the solvothermal reaction in a muffle furnace is 100° C., and the reaction time is 2 h.

Embodiment 3

[0045] This embodiment includes the following steps:

[0046] 1) Prepare 6mmol of cuprous chloride and 6mmol of indium chloride, add 10mL of triethanolamine, 8mL of acetone, and 8mL of sodium citrate solution (0.1mol / L) into the reaction kettle, and stir for 10min;

[0047] 2) Add 8mL of ammonia water (28-30%) to the above mixture, and stir for 10min;

[0048] 3) Finally, add 7.2mmol of sulfur source (the molar ratio of sulfur powder / thiourea is 2 / 1), add 10mL of hydrazine hydrate, and add water / ethylene glycol mixed solvent to make the reaction liquid reach 80% of the volume of the reactor;

[0049] 4) Insert the substrate (FTO conductive glass) into the reactor, and quickly pour in the prepared chemical reaction solution, and seal the reactor tightly. The temperature of the solvothermal reaction in a muffle furnace is 240° C., and the reaction time is 24 hours.

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Abstract

The invention relates to a method for preparing a graphene structure-like copper-indium-sulfur nanosheet array membrane, belonging to the technical field of preparation of nano materials. According to the method, the copper resource is a monovalent copper salt, the indium resource is indium chloride, the sulfur resource is powdered sulfur and thiourea, and a regular nano membrane is prepared by an in situ solvothermal method. The method comprises steps of dissolving the copper resource and the indium resource in a solution of triethanolamine, acetone and sodium citrate, adding ammonia water for regulating pH value, adding the sulfur resource in which the molar ratio of powdered sulfur to thiourea is 2:1, adding hydrazine hydrate solution, finally adding a mixed solvent of water and ethylene glycol which are in a volume ratio of 1:1, so as to obtain the precursor reaction liquid of CuInS2; adding the reaction liquid into a reaction kettle, then inserting a glass sheet for in situ solvothermal reaction, so as to obtain the regular nanosheet array membrane. The method is simple and is low in cost, the array is uniform, the nanosheet is 2-8nm thick, and an efficient method for application of the copper, indium and sulfur to new energy fields like solar batteries and photocatalysis is provided.

Description

technical field [0001] The invention relates to a method in the technical field of nanomaterial preparation, in particular to a method for preparing a graphene-like structure copper indium sulfur nanosheet array film. Background technique [0002] The structure and morphology of nanomaterials have an important impact on the performance and application of nanomaterials. More importantly, the uniform distribution of nanomaterials is of great significance for their application in energy environments such as solar cells, photocatalysis, lithium-ion batteries, and supercapacitors. , so the control and synthesis of nanomaterials are getting more and more attention. [0003] CuInS 2 Widely used in solar cells and photocatalysis, the main original is a direct band gap semiconductor, which can reduce the requirement for minority carrier diffusion, and the band gap is 1.50eV, which is the best energy gap required in solar cells. In addition, its absorption coefficient is large, its ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C03C17/22C23C26/00
Inventor 毕恩兵陈汉韩礼元
Owner SHANGHAI JIAO TONG UNIV
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