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Silicon wafer cutting steel wire

A silicon wafer cutting and steel wire technology, which is applied in the direction of metal sawing equipment, fine working devices, sawing machine tools, etc., can solve the problems of affecting the production efficiency of cutting silicon wafers and the poor ability of adhesive tape cutting grinding fluid, etc., to achieve Improve the cutting effect, increase the hardness, increase the effect of cutting effect and cutting force

Inactive Publication Date: 2014-04-16
FORTUNATE SOLAR TECH JIANGSU CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The existing steel wire for cutting silicon wafers is a high-strength steel wire coated with copper-zinc alloy on the surface. Its surface is smooth, and its ability to stick to cutting abrasive fluid is poor, which affects the production efficiency of cutting silicon wafers.

Method used

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  • Silicon wafer cutting steel wire

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Embodiment Construction

[0012] The present invention is further described below.

[0013] As shown in the figure, a steel wire for cutting silicon wafers includes two steel wire bodies 1, the diameter d1 of the steel wire body 1 is 0.3-0.6mm, and the two steel wire bodies 1 are stacked together to form an "8" shape. Formula structure, the steel wire body 1 is provided with a channel 2, the cross-sectional shape of the channel 2 is a regular hexagon, the diameter d2 of its circumscribed circle is 0.15-0.25mm, and the channel 2 is filled with cemented carbide 3, The outer surface of the steel wire body 1 is covered with a protective layer 4 made of high manganese steel. The thickness h of the protective layer 4 is 0.2-0.3 mm. The surface of the protective layer is frosted 5. The protective layer 4 A liquid storage bag 6 is provided inside, and the liquid storage bag 6 has a spherical structure, and a cylindrical channel 7 is directly provided on the outer wall of the liquid storage bag and the protecti...

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Abstract

The invention relates to a dull-polished silicon wafer cutting steel wire which comprises two steel wire bodies. The two steel wire bodies are mutually overlapped to form an integrated structure shaped like the Arabic number 'eight', channels are formed in the steel wire bodies, the cross sections of the channels are in regular hexagon shapes, the channels are filled with hard alloy, the outer surfaces of the steel wire bodies are wrapped by protective layers made of high manganese steel, dull-polishing processing is carried out on the surfaces of the protective layers, liquid storage bags are arranged in the protective layers and are of spherical structures, cylindrical channels are directly formed in the liquid storage bags and the outer walls of the protective layers, the diameters of the cylindrical channels are 0.05mm+ / -0.01mm, the cutting grinding liquid sticking capacity of the dull-polished silicon wafer cutting steel wire is improved to a certain degree, and the production efficiency is greatly improved.

Description

technical field [0001] The invention relates to a silicon wafer cutting steel wire used in the photovoltaic industry. Background technique [0002] At present, cutting silicon wafers is made of high-strength steel wires that are copper-plated and zinc-alloyed. When the steel wire is running at high speed, it sticks to the cutting abrasive fluid, and under a certain force, the abrasive material driven by the steel wire and the silicon rod are ground and cut, and finally silicon wafers are made. The existing steel wire for cutting silicon wafers is a high-strength steel wire coated with copper-zinc alloy on the surface. The surface is smooth, and the ability to stick to cutting abrasive fluid is poor, which affects the production efficiency of cutting silicon wafers. Contents of the invention [0003] The technical problem to be solved by the present invention is to provide a frosted silicon chip cutting steel wire for the above disadvantages, the ability of its adhesive ta...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B28D5/04B23D61/18
Inventor 聂金根
Owner FORTUNATE SOLAR TECH JIANGSU CO LTD
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