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Preparation method of silver nanowire-zinc oxide composite transparent electrode

A technology of silver nanowires and transparent electrodes, which is applied in cable/conductor manufacturing, circuits, electrical components, etc., can solve the problems of high price of ITO film, increase of film resistance, and decrease of conductivity, etc., and achieve easy control, high repeatability, low cost effect

Inactive Publication Date: 2014-04-02
XI AN JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, ITO faces several outstanding problems: (1) The price of ITO thin films is very high due to the lack of indium resources and the complexity of the sputtering process; (2) The current ITO electrodes prepared on flexible substrates will be damaged when the substrate is bent. Cracks appear, and the sheet resistance increases significantly with the increase in the number of bending
More importantly, if the silver nanowire film is directly exposed to the surface of the substrate, it is easy to be scratched by hard objects
In addition, silver nanowires are easily vulcanized when exposed to the air for a long time, thereby reducing the conductivity.

Method used

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  • Preparation method of silver nanowire-zinc oxide composite transparent electrode
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  • Preparation method of silver nanowire-zinc oxide composite transparent electrode

Examples

Experimental program
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Effect test

Embodiment 1

[0033] Embodiment 1: the present invention comprises the following steps:

[0034] 1) Preparation of ultra-long silver nanowires by improved polyol reduction method:

[0035] First, 0.17g of AgNO 3 Added to 10mL of ethylene glycol, using ultrasonic vibration to make AgNO 3 Dissolved in ethylene glycol, ultrasonic time is 7 minutes to form nano-silver twin crystal seeds;

[0036] Then, it was added dropwise to 10 mL containing PVP and FeCl under magnetic stirring 3 in ethylene glycol solution;

[0037] PVP uses PVP k30, and ethylene glycol uses J.T.Baker9300-01 reagent

[0038] Finally, react in an oil bath at 130°C for 45 minutes to obtain an ultra-long silver nanowire solution;

[0039] Among them, the molar ratio of PVP:AgNO 3 =1:1, AgNO 3 : FeCl 3 =1:0.001;

[0040] 2) Post-treatment process of silver nanowires:

[0041] Add 1.5 times the volume of acetone to the ultra-long silver nanowire solution obtained in step 1), centrifuge at 900 rpm for 20 minutes, pour of...

Embodiment 2

[0045] Embodiment 2: the present invention comprises the following steps:

[0046] 1) Preparation of ultra-long silver nanowires by improved polyol reduction method:

[0047] First, 0.17g of AgNO 3 Added to 10mL of ethylene glycol, using ultrasonic vibration to make AgNO 3 Dissolved in ethylene glycol, ultrasonic time is 7 minutes to form nano-silver twin crystal seeds;

[0048] Then, it was added dropwise to 10 mL containing PVP and FeCl under magnetic stirring 3 in ethylene glycol solution;

[0049] PVP uses PVP k30, and ethylene glycol uses J.T.Baker9300-01 reagent

[0050] Finally, react in an oil bath at 150°C for 30 minutes to obtain an ultra-long silver nanowire solution;

[0051] Among them, the molar ratio of PVP:AgNO 3 =1:1.5, AgNO 3 : FeCl 3 =1:0.003;

[0052] 2) Post-treatment process of silver nanowires:

[0053] Add 1.5 times the volume of acetone to the ultra-long silver nanowire solution obtained in step 1), centrifuge at 900 rpm for 20 minutes, pour ...

Embodiment 3

[0057] Embodiment 3: the present invention comprises the following steps:

[0058] 1) Preparation of ultra-long silver nanowires by improved polyol reduction method:

[0059] First, 0.17g of AgNO 3 Added to 10mL of ethylene glycol, using ultrasonic vibration to make AgNO 3 Dissolved in ethylene glycol, ultrasonic time is 7 minutes to form nano-silver twin crystal seeds;

[0060] Then, it was added dropwise to 10 mL containing PVP and FeCl under magnetic stirring 3 in ethylene glycol solution;

[0061] PVP uses PVP k30, and ethylene glycol uses J.T.Baker9300-01 reagent

[0062] Finally, react in an oil bath at 150°C for 30 minutes to obtain an ultra-long silver nanowire solution;

[0063] Among them, the molar ratio of PVP:AgNO 3 =1:1.2, AgNO 3 : FeCl 3 =1:0.005;

[0064] 2) Post-treatment process of silver nanowires:

[0065] Add 1.5 times the volume of acetone to the ultra-long silver nanowire solution obtained in step 1), centrifuge at 900 rpm for 20 minutes, pour ...

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Abstract

The invention belongs to the field of application of a nano material, particularly relates to a preparation method of a silver nanowire-zinc oxide composite transparent electrode and aims to simplify process, reduce cost and obtain the silver nanowire-zinc oxide composite transparent electrode with excellent light transmission and electrical conductivity, high wear resistance and environmental stability. The invention adopts the following technical scheme: 1, an ultra long silver nanowire is prepared by an improved polyol reduction method; 2, the silver nanowire is processed by a post-processing process; 3, a silver nanowire transparent conductive film is prepared; 4, zinc oxide nano particles are filled. The preparation method has various advantages of simple process, high repeatability, easiness for operation and control and the like.

Description

technical field [0001] The invention belongs to the application field of nanometer materials, and in particular relates to a method for preparing a silver nanowire-zinc oxide composite transparent electrode. Background technique [0002] Transparent electrodes generally refer to electrodes that have both high light transmittance (above 85%) and low resistivity (below 1×10-3Ω·cm) in the visible light region. The main application fields of transparent electrodes are flat-panel displays with high light transmittance and current input / output characteristics, solar cells, touch panels, electronic paper, transparent transistors, etc. ITO produced by sputtering is by far the most widely used material for transparent electrodes. However, ITO faces several outstanding problems: (1) The price of ITO thin films is very high due to the lack of indium resources and the complexity of the sputtering process; (2) The current ITO electrodes prepared on flexible substrates will be damaged wh...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01B13/00B22F9/24B22F1/00
Inventor 汪敏强杨智闫国栋
Owner XI AN JIAOTONG UNIV
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