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Polycrystalline velvet additive-matched surface treatment technology after felting

A treatment process and additive technology, applied in post-processing details, sustainable manufacturing/processing, post-processing, etc., can solve problems such as battery efficiency and quality decline, impurity cleaning, and porous silicon removal. , The effect of alleviating capillary phenomenon and preventing looseness and shedding

Inactive Publication Date: 2014-04-02
TAITONG TAIZHOU IND
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the traditional process of polycrystalline texturing additives has disadvantages such as unclean removal of porous silicon, high proportion of etching over-etch / pipe P color difference, and unclean cleaning of impurities in the deep pits. These problems eventually lead to the degradation of battery efficiency and quality. decline

Method used

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Examples

Experimental program
Comparison scheme
Effect test

example 1

[0013] Put the silicon wafers that have been textured in the environment of texturing additives into KOH solution for cleaning, the alkali concentration is 5%, and the temperature is 20°C. After that, the mixed acid cleaning and diffusion etching coating screen printing are completed, and the electrical properties are tested. RSH It is 40Ω, the efficiency is 17.1%, and the leakage is 0.56A. Example two:

example 2

[0014] Put the silicon wafers that have been textured in the environment of texturing additives into KOH solution for cleaning, the alkali concentration is 5%, and the temperature is 35°C. After that, the mixed acid cleaning and diffusion etching coating screen printing are completed, and the electrical properties are tested. RSH It is 95Ω, the efficiency is 17.15%, and the leakage is 0.42A. Example three:

example 3

[0015] Put the silicon wafer that has been textured in the environment of texturing additives into KOH solution for cleaning, the alkali concentration is 8%, and the temperature is 35°C. After that, the mixed acid cleaning and diffusion etching coating screen printing are completed, and the electrical properties are tested. RSH It is 156Ω, the efficiency is 17.2%, and the leakage is 0.32A. Example four:

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PUM

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Abstract

The invention discloses a polycrystalline velvet additive-matched surface treatment technology after felting. The technology comprises the following steps: (a) putting a silicon slice into a system to which a novel polycrystalline velvet additive is added to felt, so as to form a small suede with a better anti-reflection effect; (b) heating a KOH solution to an alkaline bath by using a heat exchanger with large powder, and then spraying the felted silicon slice up and down by using a hot alkaline liquor; (c) cleaning the surface of the silicon slice by using specific concentration of HF / HCL mixed acid. By adopting the technology disclosed by the invention, excessive nanoscale porous silicon can be removed, recombination is effectively reduced, open pressure and parallel resistance are improved, leakage current is reduced, and an aluminum back field also can be effectively prevented from loosening and falling off after a silk screen is printed and sintered. The capillarity on the suede is relieved due to higher concentration of hot alkaline washing, a pile pit is better in homogeneity, the probability of over-etching and P aberration of a pipe is finally reduced, and impurities in the pile pit of the small suede are removed by higher concentration of mixed acid washing. Thus, recombination is greatly reduced.

Description

Technical field: [0001] The invention relates to the field of solar cell preparation, in particular to a surface treatment process after texturing matched with polycrystalline texturing additives. Background technique: [0002] At present, the efficiency requirements of crystalline silicon solar cells are getting higher and higher. As a new type of product that can effectively reduce the reflectivity and increase the short-circuit current and have a certain gain after the module manufacturing process, the polycrystalline texturing additive has a higher return on investment. It has gradually been tried and even mass-produced by major manufacturers. However, the traditional process of polycrystalline texturing additives has disadvantages such as unclean removal of porous silicon, high proportion of etching over-etch / pipe P color difference, and unclean cleaning of impurities in the deep pits. These problems eventually lead to the degradation of battery efficiency and quality. ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B33/10H01L31/18
CPCY02P70/50
Inventor 费存勇初仁龙王志刚鲁伟明
Owner TAITONG TAIZHOU IND
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