Growth method of bismuth germanate single crystal

A growth method, bismuth germanate technology, applied in the direction of single crystal growth, crystal growth, single crystal growth, etc., can solve the problems of affecting the performance of bismuth germanate single crystal, easy to bring impurities, high production cost, etc., to shorten the production cycle, The effect of reducing production cost and improving quality

Active Publication Date: 2014-04-02
安徽昱升光电科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the process of this method is relatively cumbersome, and impurities are easily brought in during the sintering and casting process, thereby affecting the performance of bismuth germanate single crystal; in addition, a large amount of precious metal platinum is required in the preparation process of this method, and its production cost is high.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] A method for growing a bismuth germanate single crystal, the method comprising the following steps:

[0023] 1) Put Bi 2 o 3 with GeO 2 Mix evenly according to the molar ratio of 1.5:3, the total mass of raw materials is 15Kg, and then place it in a platinum crucible with 6 seed crystals, and place the platinum crucible in the lower crucible; wherein, the The gap is filled with sintered alumina powder; 2) Six ultrasonic sensing devices are respectively installed on the top of the platinum crucible, and then the platinum crucible is sealed; the sealed platinum crucible is placed in the Bridgman crystal growth furnace and heated To 1180°C, the heating rate is 48°C / h, then turn on the ultrasonic sensing device, control the ultrasonic frequency to 10KHz, carry out the compound reaction in an environment of ultrasonic vibration and constant temperature, react for 12h, and obtain germanium with uniform composition and molten state Bismuth bismuth polycrystalline material; ...

Embodiment 2

[0025] A kind of growth method of bismuth germanate single crystal, this method comprises the following steps: 1) with Bi 2 o 3 with GeO 2 Mix evenly according to the molar ratio of 2:3, the total mass of raw materials is 25Kg, and then place it in a platinum crucible with 7 seed crystals, and place the platinum crucible in the lower crucible; wherein, between the lower crucible and the platinum crucible The gap is filled with sintered alumina powder; 2) Seven ultrasonic sensing devices are respectively installed on the top of the platinum crucible, and then the platinum crucible is sealed; the sealed platinum crucible is placed in the Bridgman crystal growth furnace and heated To 1240°C, the heating rate is controlled between 55°C / h, and then the ultrasonic sensing device is turned on, the ultrasonic frequency is controlled to 10KHz, and the compound reaction is carried out in an environment of ultrasonic vibration and constant temperature. The reaction time is 18h, and the ...

Embodiment 3

[0027] A method for growing a bismuth germanate single crystal, the method comprising the following steps:

[0028] 1) Put Bi 2 o 3 with GeO 2Mix evenly according to the molar ratio 2.2:3, the total mass of raw materials is 56Kg, then place in a platinum crucible with 8 seed crystals, place the platinum crucible in the lower crucible; wherein, the The gap is filled with sintered alumina powder; 2) 8 ultrasonic sensing devices are respectively installed on the top of the platinum crucible, and then the platinum crucible is sealed; the sealed platinum crucible is placed in the Bridgman crystal growth furnace, and the temperature is raised To 1320°C, the heating rate is 60°C / h, then turn on the ultrasonic sensing device, control the ultrasonic frequency to 10KHz, carry out the compound reaction in an environment of ultrasonic vibration and constant temperature, and react for 24 hours to obtain germanium with uniform composition and molten state Bismuth bismuth polycrystalline ...

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Abstract

The invention discloses a growth method of bismuth germanate single crystal. The method comprises the following steps: with Bi2O3 and GeO2 as raw materials, carrying out combination reaction in a constant-temperature environment under ultrasonic vibration, so as to obtain a bismuth germanate polycrystal material with which is uniform in component and is in molten state; and preparing the bismuth germanate single crystal by adopting a bridgman crystal growth method. Growth of the bismuth germanate single crystal is realized at the crucible growth part in one step by an ultrasonic sensing technology. By adopting the method, the link of melting and synthetizing the polycrystal material by using a platinum crucible in the bismuth germanate single crystal growth process employing the traditional descending method is removed, the growth technology of the bismuth germanate single crystal is simplified, the production cycle is shortened, and the dosage of precious metal platinum is greatly reduced, so that the production cost is reduced. Meanwhile, intervention of external impurity elements in the production process also can be avoided by the growth method disclosed by the invention, and the quality of the bismuth germanate crystal is further improved.

Description

technical field [0001] The invention relates to the field of crystal growth, in particular to a method for growing a bismuth germanate single crystal using ultrasonic sensing technology. Background technique [0002] Bismuth germanate (Bi 4 Ge 3 o 12 , BGO) crystal is a kind of multifunctional scintillation crystal with good performance. Scintillators are widely used in high-energy physics, nuclear physics, space physics, nuclear medicine, geological exploration and other industrial fields. [0003] In traditional technology, bismuth germanate single crystal is made of raw material Bi 2 o 3 with GeO 2 It is prepared by directly mixing and heating to a temperature above the melting point for reaction, because Bi 2 o 3 with GeO 2 It is not a uniform melt, and the density of the two is quite different, specifically Bi 2 o 3 The density is 8.9g / cm 3 , GeO 2 The density is 4.8 g / cm 3 , direct mixing and heating is easy to produce stratification phenomenon, the lower...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B11/00C30B29/32
Inventor 胡智向朱刘文崇斌罗涛
Owner 安徽昱升光电科技有限公司
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