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A method for preparing silicon carbide microcrystals with uniform size and polyhedral shape

A polyhedron, silicon carbide technology, applied in the field of preparation of silicon carbide microcrystals, can solve problems such as difficulty in obtaining, achieve uniform size, and achieve uniform spontaneous nucleation effects

Active Publication Date: 2016-07-06
HEBEI SYNLIGHT CRYSTAL CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For discrete, uniform-sized, polyhedral SiC crystallites (the SiC crystallites refer to SiC single crystals with a size less than 50 microns), this method is difficult to obtain

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] Put the SiC bulk crystal and the crucible with the microcrystal deposition collector fixed into the crystal growth furnace. Vacuum the crystal growth system to 10 -3 After Pa, after rushing into 15000Pa hydrogen, raise the temperature of the system so that the raw material has a high evaporation temperature (1950-2000°C), and the collector has a relatively low temperature (1950°C), and SiC microcrystal growth is carried out. After 30 minutes of growth , turn off the power supply of the crystal growth furnace, and the product is cooled to room temperature with the furnace. The SiC microcrystalline product attached to the collector was taken out for morphology observation. The grown SiC crystallites are uniform in size (40-50 microns), without agglomeration, and the SiC crystallites present polyhedral morphology.

Embodiment 2

[0026] Put the silicon carbide abrasive and the crucible holding the crystallite deposition collector into the crystal growth furnace. Vacuum the crystal growth system to 3×10 -3 Pa, after filling in 8000Pa hydrogen and argon mixed gas, raise the temperature of the system so that the raw material has a high evaporation temperature (1850-1900°C), and the collector has a relatively low temperature (1800°C), to carry out SiC microcrystalline growth, After 1 hour of growth, the power of the crystal growth furnace was turned off, and the product was cooled to room temperature with the furnace. The SiC microcrystalline product attached to the collector was taken out for morphology observation. The grown SiC crystallites are uniform in size (30-40 microns), without agglomeration, and the SiC crystallites present polyhedral morphology.

Embodiment 3

[0028] Put the mixed powder of Si and C and the crucible fixed with the microcrystal deposition collector into the crystal growth furnace. Vacuum the crystal growth system to 10 -3 Pa, then fill in 10Pa argon, raise the temperature of the system so that the raw material has a high evaporation temperature (1800-1850°C), and the collector has a relatively low temperature (1750°C), for SiC microcrystal growth, after 2 hours of growth , turn off the power supply of the crystal growth furnace, and the product is cooled to room temperature with the furnace. The SiC microcrystalline product attached to the collector was taken out for morphology observation. The grown SiC crystallites have a uniform size (10-20 microns), basically no agglomeration phenomenon, and the SiC crystallites present polyhedral morphology.

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Abstract

The invention relates to a method for preparing silicon carbide microcrystals with uniform size and polyhedral shape, comprising the following steps: placing SiC raw materials in a crucible, fixing a microcrystal deposition collector inside the crucible cover, screwing the crucible, and placing the crystal In the growth furnace; vacuumize the crystal growth system to <5×10 -3 Pa, then pour into the atmosphere gas of 1-20000Pa; increase the temperature of the crystal growth system so that the temperature of the raw material area is 1800-2200°C, the temperature of the microcrystal deposition collector at the crucible cover is 1750-2100°C, and the microcrystal growth starts ; After 0.5 to 2 hours of microcrystal growth, turn off the power supply of the crystal growth furnace. The present invention does not involve any other precursors and catalysts, and the raw material area is separated from the deposition growth area, and the obtained SiC crystallite size can be adjusted in the range of 10-50 microns, and is separated from each other, showing a polyhedral morphology, and the crystallite growth period is short , the method is simple, easy to promote, suitable for large-scale industrial production, and has strong practical value.

Description

technical field [0001] The invention relates to a method for preparing silicon carbide microcrystals, in particular to a method for preparing silicon carbide microcrystals with uniform size and polyhedral shape, and belongs to the field of silicon carbide crystal preparation. Background technique [0002] At present, silicon carbide (SiC) crystallites are basically obtained by sieving and synthesizing SiC particles of different sizes, which have poor size uniformity, serious agglomeration of crystallite particles, and various shapes. SiC microcrystals have broad application prospects in micromachining cutting tools, high-efficiency abrasives, and strengthening materials for ceramic matrix. SiC microcrystals with polyhedral morphology, uniform size, and discrete can undoubtedly be more efficiently used in the above fields. Therefore, it is very meaningful to develop a method for synthesizing SiC microcrystals with uniform size and polyhedral morphology, and has broad applicat...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/36C30B11/00
Inventor 陶莹高宇邓树军赵梅玉段聪
Owner HEBEI SYNLIGHT CRYSTAL CO LTD
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