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A bifeo3 thin film with high remnant polarization intensity co-doped with b-site mn and ni and its preparation method

A polarization intensity, high residual technology, applied in chemical instruments and methods, inorganic chemistry, iron compounds, etc., can solve the problem that ferroelectricity cannot be measured correctly in saturation polarization, it is difficult to observe hysteresis loops, and low dielectric Constants and other problems, to achieve the effect of easy chemical composition of the film, solve the price change of Fe, and improve the performance of multiferroics

Active Publication Date: 2016-01-20
SHAANXI UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Fluctuations in the valence state of Fe lead to a large leakage conductance, making BiFeO 3 The leakage current is large, and due to the large leakage conduction, the ferroelectricity cannot be measured correctly and saturation polarization is obtained
On the other hand, BiFeO 3 The properties of low dielectric constant and low resistivity make it difficult to observe the hysteresis loop
These characteristics greatly limit its application

Method used

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  • A bifeo3 thin film with high remnant polarization intensity co-doped with b-site mn and ni and its preparation method
  • A bifeo3 thin film with high remnant polarization intensity co-doped with b-site mn and ni and its preparation method
  • A bifeo3 thin film with high remnant polarization intensity co-doped with b-site mn and ni and its preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] 1) Bi(NO 3 ) 3 ·5H 2 O, Fe(NO 3 ) 3 9H 2 O, C 4 h 6 MnO 4 4H 2 O and C 4 h 6 NiO 4 4H 2 O is dissolved in the mixed solution formed by mixing ethylene glycol methyl ether and acetic anhydride at a molar ratio of 1.05:0.95:0.04:0.01, and then stirred for 2 hours to make it uniform to obtain BiFeO 3 Precursor; Among them, BiFeO 3 The total metal ion concentration in the precursor solution is 0.3mol / L, and the volume ratio of ethylene glycol methyl ether and acetic anhydride in the mixed solution is 3:1;

[0025] 2) BiFeO 3 The precursor solution was left to stand for 24h, and then spin-coated BiFeO on the FTO / glass substrate 3 The wet film was prepared from the precursor solution, and the wet film was baked at 200°C for 5 minutes to obtain a dry film, and then rapidly annealed at 550°C for 15 minutes to obtain crystalline BiFeO 3 film;

[0026] 3) To be crystalline BiFeO 3 After film cooling, repeat step 2) again until crystalline BiFeO 3 The film reach...

Embodiment 2

[0032] 1) Bi(NO 3 ) 3 ·5H 2 O, Fe(NO 3 ) 3 9H 2 O, C 4 h 6 MnO 4 4H 2 O and C 4 h 6 NiO 4 4H 2 O is dissolved in the mixed solution formed by mixing ethylene glycol methyl ether and acetic anhydride at a molar ratio of 1.05:0.94:0.04:0.02, and then stirred for 2 hours to make it uniform to obtain BiFeO 3 Precursor; Among them, BiFeO 3 The total metal ion concentration in the precursor solution is 0.3mol / L, x=0.02;

[0033] 2) BiFeO 3 The precursor solution was left to stand for 32h, and then spin-coated BiFeO on the FTO / glass substrate 3 The wet film was prepared from the precursor solution, and the wet film was baked at 200°C for 10 minutes to obtain a dry film, and then rapidly annealed at 550°C for 10 minutes to obtain crystalline BiFeO 3 film.

[0034] 3) To be crystalline BiFeO 3 After film cooling, repeat step 2) again until crystalline BiFeO 3 The film reaches the required thickness, that is, the B-site Mn and Ni co-doped BiFeO with high remanent pola...

Embodiment 3

[0036] 1) Bi(NO 3 ) 3 ·5H 2 O, Fe(NO 3 ) 3 9H 2 O, C 4 h 6 MnO 4 4H 2 O and C 4 h 6 NiO 4 4H 2 O is dissolved in the mixed solution formed by mixing ethylene glycol methyl ether and acetic anhydride at a molar ratio of 1.05:0.93:0.04:0.03, and then stirred for 2 hours to make it uniform to obtain BiFeO 3 Precursor; Among them, BiFeO 3 The total metal ion concentration in the precursor solution is 0.3mol / L; the volume ratio of ethylene glycol methyl ether and acetic anhydride in the mixed solution is 3:1;

[0037] 2) BiFeO 3 The precursor solution was left to stand for 28h, and then spin-coated BiFeO on the FTO / glass substrate 3 The wet film was prepared from the precursor solution, and the wet film was baked at 200°C for 7 minutes to obtain a dry film, and then rapidly annealed at 550°C for 13 minutes to obtain crystalline BiFeO 3 film.

[0038] 3) To be crystalline BiFeO 3 After film cooling, repeat step 2) again until crystalline BiFeO 3 The film reaches t...

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Abstract

The invention discloses a B-site Mn and Ni co-doped high-remanent-polarization BiFeO3 film and a preparation method thereof. The preparation method comprises the following steps: dissolving bismuth nitrate, ferric nitrate, manganese acetate and nickel acetate according to a molar ratio of 1.05:[(0.92-0.98)-x]:(0.02-0.08):x in a mixed solution of ethylene glycol monomethyl ether and acetic anhydride, uniformly stirring to obtain a BiFeO3 precursor solution, wherein the total metal ion concentration in the BiFeO3 precursor solution is 0.1-0.5mol / L, and x is equal to 0.01 to 0.03; spin coating the BiFeO3 precursor solution on a FTO / glass substrate to prepare a wet film, baking the wet film to obtain a dried film, annealing at the temperature of 550 DEG C for 8-13 minutes, thus obtaining a crystalline state BiFeO3 film; repeatedly operating until the BiFeO3 film reaches the needed thickness after the crystalline state BiFeO3 film is cooled, thus obtaining the B-site Mn and Ni co-doped high-remanent polarization BiFeO3 film. According to the method, a sol-gel process is adopted, the equipment requirement is simple, the method is suitable for preparing films on large surfaces and out-of-shape surfaces, the chemical constituents are accurately controlled, and the crystal structure is regulated through co-doping, so that the ferroelectric properties of the film are greatly improved.

Description

technical field [0001] The invention belongs to the field of functional materials, in particular to a B-site Mn and Ni co-doped BiFeO with high remnant polarization 3 Thin films and methods for their preparation. Background technique [0002] BiFeO 3 It is one of the few single-phase multiferroic materials that have both ferroelectric and ferromagnetic properties at room temperature. temperature is 370°C). As people's requirements for the miniaturization of electronic devices are getting higher and higher, the research on this single-phase material with multiple functions at the same time has attracted people's attention. Therefore BiFeO 3 It has become an important functional material that can be widely used in the fields of new memory devices, spintronic devices, microelectronics, optoelectronics, integrated optics, and microelectromechanical systems. [0003] However, currently limiting BiFeO 3 The biggest problem for thin film applications is the low resistivity, w...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01G49/00C04B35/26C04B35/624
Inventor 谈国强董国华罗洋洋
Owner SHAANXI UNIV OF SCI & TECH
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