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A kind of in-bi2wo6 photocatalyst with low electron-hole recombination rate and preparation method thereof

A technology of electron hole and photocatalyst, which is applied in the field of In-Bi2WO6 photocatalyst and its preparation, can solve the problems affecting the properties of synthetic powder, particle size, uneven heat distribution, slow heating rate, etc., and achieve uniform and stable morphology , short preparation cycle, fast response

Active Publication Date: 2015-09-30
盐城青墩津邦水务有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in the traditional hydrothermal synthesis method, the common conduction heating method is often used. This heating method has the disadvantages of slow heating rate, long reaction time, uneven heat distribution, and large temperature gradient, which seriously affects the synthetic powder. The nature of the body, particle size, etc.

Method used

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  • A kind of in-bi2wo6 photocatalyst with low electron-hole recombination rate and preparation method thereof
  • A kind of in-bi2wo6 photocatalyst with low electron-hole recombination rate and preparation method thereof
  • A kind of in-bi2wo6 photocatalyst with low electron-hole recombination rate and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] In-Bi with low electron-hole recombination rate 2 WO 6 The preparation method of the photocatalyst includes the following steps:

[0032] Step 1: Weigh Bi(NO) according to the molar ratio of Bi:W=2:1 3 ) 3 ·5H 2 O and Na 2 WO 4 ·2H 2 Put O into the beaker, and weigh a certain amount of In(NO 3 ) 3 ·6H 2 O is added to the beaker, where the amount of In added x=2%, x=n In / (n Bi +n In )×100%, n Bi And n In Are the molar amounts of Bi and In respectively;

[0033] Step 2: Measure deionized water and add it to the beaker, stir fully at room temperature for 60 minutes until the raw materials are fully dissolved to form a white suspension, and prepare a mixed solution, in which Bi(NO 3 ) 3 ·5H 2 The concentration of O is 0.2mol / L, Na 2 WO 4 ·2H 2 The O concentration is 0.1 mol / L, and then ultrasonically oscillated for 30 minutes to obtain the precursor solution, and adjust the pH value of the precursor solution to 2.0;

[0034] Step 3: Transfer the precursor liquid into a microwave...

Embodiment 2

[0038] In-Bi with low electron-hole recombination rate 2 WO 6 The preparation method of the photocatalyst includes the following steps:

[0039] Step 1: Weigh Bi(NO) according to the molar ratio of Bi:W=2:1 3 ) 3 ·5H 2 O and Na 2 WO 4 ·2H 2 Put O into the beaker, and weigh a certain amount of In(NO 3 ) 3 ·6H 2 O was added to the beaker, the amount of In added x=10%, x=n In / (n Bi +n In )×100%, n Bi And n In Are the molar amounts of Bi and In respectively;

[0040] Step 2: Measure deionized water and add it to the beaker, stir fully at room temperature for 60 minutes until the raw materials are fully dissolved to form a white suspension, and prepare a mixed solution, in which Bi(NO 3 ) 3 ·5H 2 The concentration of O is 0.4mol / L, Na 2 WO 4 ·2H 2 The O concentration is 0.2mol / L, and then ultrasonically oscillated for 40 minutes to obtain the precursor solution, and adjust the pH value of the precursor solution to 1.8;

[0041] Step 3: Transfer the precursor liquid into a microwave hydr...

Embodiment 3

[0045] In-Bi with low electron-hole recombination rate 2 WO 6 The preparation method of the photocatalyst includes the following steps:

[0046] Step 1: Weigh Bi(NO) according to the molar ratio of Bi:W=2:1 3 ) 3 ·5H 2 O and Na 2 WO 4 ·2H 2 Put O into the beaker, and weigh a certain amount of In(NO 3 ) 3 ·6H 2 O is added to the beaker, where the amount of In added x=15%, x=n In / (n Bi +n In )×100%, n Bi And n In Are the molar amounts of Bi and In respectively;

[0047] Step 2: Measure deionized water and add it to the beaker, stir fully at room temperature for 60 minutes until the raw materials are fully dissolved to form a white suspension, and prepare a mixed solution, in which Bi(NO 3 ) 3 ·5H 2 The concentration of O is 0.1mol / L, Na 2 WO 4 ·2H 2 The concentration of O is 0.05mol / L, and then ultrasonically oscillate for 60 minutes to obtain the precursor solution, and adjust the pH of the precursor solution to 1.6;

[0048] Step 3: Transfer the precursor liquid into a microwave hy...

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Abstract

The invention provides an In-Bi2WO6 photocatalyst with low electron hole recombination rate and a preparation method thereof. The preparation method comprises the following steps: respectively dissolving bismuth nitrate pentahydrate, sodium tungstate dihydrate and indium nitrate hexahydrate into water according to a certain ratio; agitating uniformly and carrying out ultrasonic dispersion to obtain a precursor solution; and keeping the heat at 140-240 DEG C by using a microwave hydrothermal method by power of 300 W for 30-120 minutes to obtain the In-Bi2WO6 photocatalyst with the low electron hole recombination rate. A main component is quadrature-phase Bi2WO6 and the Bi2WO6 contains In<3+>. According to the In-Bi2WO6 photocatalyst with the low electron hole recombination rate and the preparation method thereof, the advantages of microwave and hydrothermal methods are combined; the process is simple and easy to control; the preparation period is short; the synthesized In-Bi2WO6 photocatalyst has the low electron hole recombination rate; a photoproduction electron hole has the crucial effects on a reaction for photo-catalytically degrading organic pollutants; the low electron hole recombination rate directly influences the photocatalytic performance of the photocatalyst.

Description

Technical field [0001] The invention belongs to the field of functional materials and relates to an In-Bi with low electron-hole recombination rate 2 WO 6 Photocatalyst and its preparation method. Background technique [0002] In recent years, some new tungstate photocatalytic materials with visible light response have been discovered by researchers. Tungstate and other semiconductor materials have good application prospects due to their unique structure and physical and chemical properties, such as magnetic devices, scintillation materials, corrosion inhibitors and catalysts, etc., which have become research hotspots in recent years. Since bismuth tungstate (Bi 2 WO 6 The visible light catalytic activity of) was discovered and reported by Akihiko Kudo and Statoshi Hijii in 1999, a new type of narrow band gap photocatalytic material Bi with visible light response and good visible light catalytic activity 2 WO 6 (The forbidden band width is only about 2.8eV), which has attracted w...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B01J23/31
Inventor 谈国强黄靖
Owner 盐城青墩津邦水务有限公司
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