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Silicate low-temperature co-fired ceramic substrate material and preparation method thereof

A technology for low temperature co-fired ceramics and substrates, which is applied in the field of silicate low temperature co-fired ceramic substrate materials and their preparation, ceramic substrate materials and their preparation fields. Can not meet the dielectric performance requirements and other problems, to achieve the effect of meeting the dielectric performance requirements, low dielectric constant, and low price

Inactive Publication Date: 2014-03-05
SHANDONG UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0009] However, the resonant frequency temperature coefficient of the prepared ceramic material deviates greatly from 0, which are -28ppm / °C and -21.9ppm / °C respectively
Therefore, the prepared ceramic material cannot guarantee high stability and high reliability of the device, that is, it cannot meet the dielectric performance requirements of high-frequency and high-speed circuits for substrate materials.

Method used

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  • Silicate low-temperature co-fired ceramic substrate material and preparation method thereof
  • Silicate low-temperature co-fired ceramic substrate material and preparation method thereof
  • Silicate low-temperature co-fired ceramic substrate material and preparation method thereof

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Embodiment Construction

[0042] The specific implementation of the present invention will be further described below in conjunction with examples.

[0043] Embodiment 1-12 of the present invention is all prepared according to the following preparation method, and described preparation method comprises the following steps successively:

[0044] 1. SiO 2 Mix with ZnO at a molar ratio of 1:2, put it into a ball mill tank and add absolute ethanol or deionized water for ball milling. The ball milling time is 2 to 3 hours, then dry at 80-110°C, and pass through a 40-mesh sieve for later use;

[0045] 2. Add CaCO 3 with TiO 2 According to the molar ratio of 1:1, put it into the ball mill tank and add absolute ethanol or deionized water for ball milling. The ball milling time is 2-3 hours, then dry at 80-110°C and pass through a 40-mesh sieve for later use;

[0046] 3. SiO 2 and ZnO mixture from room temperature to 1100-1300°C at a heating rate of 3-5°C / min and kept for 1-5 hours; the CaCO 3 and TiO 2 T...

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Abstract

The invention discloses a silicate low-temperature co-fired ceramic substrate material and a preparation method thereof. The principal crystalline phase of the ceramic substrate material is Zn2SiO4, and the paracrystalline phase is CaTiO3. The dielectric constant [epsilon]r of the ceramic substrate material is 6.1-8.2, the quality factor Q*f is 9600-16000 GHz, and the resonance frequency temperature coefficient [Tau]f is -52 ppm / DEG C to 28 ppm / DEG C. The preparation method includes grinding the Zn2SiO4 and the CaTiO3 respectively into powder, mixing the CaTiO3 and the Zn2SiO4 with Bi2O3-CuO-B2O3 or Li2CO3-Bi2O3-CuO-B2O3 according to a ratio, adding absolute ethanol or deionized water, ball milling, drying, granulating, and sintering at 900-975 DEG C in a furnace. According to the preparation method, a product has the advantages of high purity, good quality, simple technology and low sintering temperature, and can be co-fired with Ag having high conductivity.

Description

technical field [0001] The invention relates to a ceramic substrate material and a preparation method thereof, in particular to a silicate low-temperature co-fired ceramic substrate material and a preparation method thereof, belonging to the field of electronic substrate materials. Background technique [0002] Low-temperature co-fired ceramic materials, as the key basic materials in low-temperature co-fired technology, have stricter performance requirements than ordinary microwave dielectric ceramics, such as: [0003] (1) It has good microwave dielectric properties: it has a serialized dielectric constant (2-2000) that can adapt to various purposes, and as a substrate material, it is usually required that the material has a low dielectric constant to shorten the signal between chips. It has a high quality factor to ensure excellent frequency selection characteristics and reduce insertion loss at high frequencies; it has a near-zero resonant frequency temperature coefficien...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/16C04B35/622C04B35/63
Inventor 窦刚郭梅
Owner SHANDONG UNIV OF SCI & TECH
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