Low-temperature co-fired ceramic substrate material and preparation method thereof
A low-temperature co-fired ceramic and ceramic substrate technology is applied in the field of electronic substrate materials to achieve the effects of excellent dielectric properties, cost reduction and low dielectric constant.
Active Publication Date: 2013-06-19
威海圆环先进陶瓷股份有限公司
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However, the development of modern technology requires electronic equipment to be reduced in size and weight, and the integration of a single active device can no longer meet production applications, so the miniaturization of passive devices has become inevitable.
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Abstract
The invention discloses a low-temperature co-fired ceramic substrate material and a preparation method thereof. The ceramic substrate material is zinc borate ceramic of which the main crystalline phase is 3ZnO.B2O3. The ceramic raw material consists of the components of ZnO and H3BO3, wherein the mole percent of the H3BO3 is 60-41.176%, or the raw material consists of chemical components of ZnO and B2O3, wherein the mole percent of the B2O3 is 42.857-25.926%. The preparation method of the ceramic substrate material comprises the steps of firstly presintering to combine 3ZnO.B2O3 powder, then adding deionized water, ball milling, drying, granulating, tableting and sintering. The material disclosed by the invention has a low sintering temperature (950-1000 DEG C) and good microwave dielectric performances: dielectric constant epsilon r = 6.5-6.9, Q*f = 26400-44600 GHz, and the resonant frequency temperature coefficient = -66 to -94 ppm / K, and the dielectric performance requirement of a high-frequency high-speed circuit on the substrate material can be met.
Description
technical field The invention belongs to the field of electronic substrate materials, in particular to a low-temperature co-fired ceramic substrate material and a preparation method thereof. Background technique With the rapid development of modern information technology, the miniaturization, light weight, integration and high frequency of electronic circuits have put forward requirements for small size, high frequency, high reliability and high integration of electronic components. The microelectronics technology based on the integration of active devices has been developed relatively well, and once became the main technology for the miniaturization of electronic devices. However, the development of modern technology requires electronic equipment to be reduced in size and weight, and the integration of a single active device can no longer meet production applications, so the miniaturization of passive devices has become inevitable. At present, small and medium-sized passiv...
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Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/453C04B35/622
Inventor 周东祥胡云香傅邱云龚树萍郑志平赵俊刘欢韦东梅
Owner 威海圆环先进陶瓷股份有限公司
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