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Atomic layer deposition preparation method for aluminum oxide thin film

A technology of atomic layer deposition and aluminum oxide, applied in coating, gaseous chemical plating, final product manufacturing, etc., can solve the problem of lower passivation performance, lower performance of crystalline silicon battery, poor contact performance of aluminum back electrode, etc. problems, to achieve the effect of avoiding H2 accumulation and good photoelectric conversion efficiency

Active Publication Date: 2014-01-22
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In practical application, Al 2 o 3 After the / SiNx laminated film undergoes the aluminum back field sintering process at ~800 °C, a certain number of bubbles often appear in the film, and the appearance of the bubble reduces the Al 2 o 3 The passivation performance of the aluminum back electrode and the contact performance of the crystalline silicon cell are deteriorated, and the occurrence of these problems will reduce the performance of the crystalline silicon cell

Method used

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  • Atomic layer deposition preparation method for aluminum oxide thin film

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Embodiment 1

[0033] With p-type crystalline silicon as the substrate 4, put figure 1 In the shown reaction chamber 5, the reaction chamber 5 is evacuated to a vacuum degree of 0.05 Torr through the pumping port 6, and then an inert gas (argon) is used to stabilize the pressure at 0.1 Torr, and the carrier gas or inert gas and the reaction source are separated from each other. The same inlet goes into the chamber. O3 gas inlet 1 of reaction chamber 5, H 2 O inlet 2 and TMA inlet 3 are controlled by valves.

[0034] TMA-H 2 O to Al 2 o 3 Stage: reaction temperature 150°C, reaction pressure 0.1Torr, reaction cycle 15s, TMA source temperature 15°C, H 2 O source temperature is 20°C, carrier gas flow rate is 0.5slm, and the number of reaction cycles is 40;

[0035] TMA-O 3 Preparation of Al 2 o 3 Stage: reaction temperature 180°C, reaction pressure 0.1Torr, process cycle 8s, TMA source temperature 15°C, carrier gas flow rate 0.5slm, O 3 Concentration 200g / m 3 , O 3 The flow rate is 2...

Embodiment 2

[0038] The reaction chamber and substrate are the same as in Example 1.

[0039] TMA-H 2 O to Al 2 o 3 Stage: reaction temperature 300°C, reaction pressure 15Torr, process cycle 5s, TMA source temperature 35°C, H 2 O source temperature is 40°C, carrier gas flow rate is 5slm, and the number of process cycles is 160;

[0040] TMA-O 3 Preparation of Al 2 o 3 Stage: reaction temperature 300°C, reaction pressure 15Torr, process cycle 3s, TMA source temperature 35°C, carrier gas flow rate 5slm, O 3 Concentration 300g / m3, O 3 The flow rate is 20slm, and the number of process cycles is 300;

[0041] Al prepared by the above process 2 o 3 The total thickness is about 40nm, the thickness of the first layer of aluminum oxide passivation film is 15nm, and the density of the first layer of aluminum oxide passivation film is 3.3g / cm 3 , the density of the second layer of Al2O3 passivation film is 2.9g / cm 3 .. After 800℃, 3s high-temperature process, no air bubbles appear on the...

Embodiment 3

[0043] The reaction chamber and substrate are the same as in Example 1.

[0044] TMA-H 2 O to Al 2 o 3 Stage: reaction temperature 220°C, reaction pressure 1Torr, process cycle 7s, TMA source temperature 30°C, H 2 O source temperature is 35°C, carrier gas flow rate is 2slm, and the number of process cycles is 110;

[0045] TMA-O 3 Preparation of Al 2 o 3 Stage: reaction temperature 220°C, reaction pressure 1Torr, process cycle 5s, TMA source temperature 30°C, carrier gas flow rate 2slm, O 3 Concentration 250g / m 3 , O 3 The flow rate is 10slm, and the number of process cycles is 200;

[0046] Al prepared by the above process 2 o 3 The total thickness is about 28nm, and the density of the first layer of Al2O3 passivation film is 3.1g / cm 3 ; The density of the second layer of aluminum oxide passivation film is 2.8g / cm 3 .. After 800℃, 3s high-temperature process, no air bubbles appear on the surface of the film. In unheated Al 2 o 3 After depositing a layer of 80...

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Abstract

The invention belongs to the field of semiconductor parts, and provides an atomic layer deposition preparation method for an aluminum oxide thin film. The method comprises the following steps of (1) loading a silicon substrate in an atomic layer deposition reaction chamber, and vacuumizing the reaction chamber; (2) performing atomic layer deposition by taking TMA (trimethylaluminum) as an aluminum source and taking H2O as an oxygen source; (3) performing atomic layer deposition by taking TMA as the aluminum source and taking O3 as the oxygen source. According to the method, an H2O and O3 combination Al2O3 diatomic layer deposition process is provided for solving the problem of bubbles after the sintering of an Al2O3 / SiNx laminated thin film, and compared with an H2O-based Al2O3 thin film, the Al2O3 thin film prepared from reaction sources TMA and O3 is looser, and the accumulation of H2 is effectively avoided; an atomic layer deposition technology is utilized, the thickness of an Al2O3 diatomic layer is accurately controlled, and prepared crystalline silicon with an Al2O3 passive film has high photoelectric conversion efficiency, and is free of hydrogen bubbles.

Description

technical field [0001] The invention belongs to the field of semiconductor devices, and in particular relates to a method for preparing a passivation film on the surface of a semiconductor material. Background technique [0002] In the field of crystalline silicon solar cells, the passivation materials of crystalline silicon cells mainly include silicon oxide (SiO 2 ), amorphous silicon (α-Si), silicon nitride (SiN x ), aluminum oxide (Al 2 o 3 ) and silicon carbide (SiC x )Wait. Among them, Al 2 o 3 The film contains high concentration (1012~1013e / cm 2 ) fixed negative charge and the film contains a relatively high concentration (2-5atom%) of free hydrogen atoms, which makes Al 2 o 3 The film is very suitable as a passivation material for the back electrode of p-type crystalline silicon cells. Photogenerated carriers are generated when the cell is illuminated. The photogenerated carriers are divided into multi-carriers and minority-carriers. The lifetime of the mi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18C23C16/40C23C16/44
CPCH01L21/02178H01L21/0228H01L31/1804Y02E10/547Y02P70/50
Inventor 李春雷赵星梅兰云峰孙月峰
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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