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Preparation method of a nano-laser laser beam combining device

A nano-laser and laser beam combining technology, which is applied in nano-optics, nano-technology, nano-technology, etc., can solve problems such as limited laser power, and achieve the effects of compact structure, improved laser power, and stable performance

Active Publication Date: 2015-12-02
INST OF OPTICS & ELECTRONICS - CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The technical problem to be solved in the present invention is: aiming at the limitation of the laser power of a single nano-laser, realize the spatial coupling and transmission of the laser by constructing an artificial material structure, and then realize the combination of multiple laser beams to increase the laser power of the nano-laser

Method used

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  • Preparation method of a nano-laser laser beam combining device
  • Preparation method of a nano-laser laser beam combining device
  • Preparation method of a nano-laser laser beam combining device

Examples

Experimental program
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Effect test

Embodiment 1

[0031] Example 1, such as figure 1 As shown, a nanolaser laser beam combining device is prepared on a curved surface groove with a diameter depth of 200nm, and the specific implementation steps are as follows:

[0032] (1) Deposit a curved multilayer film structure on a curved groove. Metal Ag and dielectric SiO are alternately deposited by magnetron sputtering deposition 2 , in which the metal Ag is deposited by DC sputtering with a DC power of 120w; the dielectric SiO 2 Radio frequency sputtering is used for deposition, and the deposition power is 200w. The film thickness of each layer is 20nm. A total of 10 groups of 20 layers were deposited, with a total film thickness of 400nm, such as figure 2 Shown; 1 represents metal Ag; 2 represents silicon dioxide.

[0033] (2) Planarization is carried out by coating AZ-3100 photoresist, the rotation speed is 4000rpm, the spin coating time is 40s, and baked on a hot plate at 120°C for 1h. The glue thickness is 1000nm, such as ...

Embodiment 2

[0038] Embodiment 2, in such as figure 1 As shown, a nanolaser laser beam combining device is prepared on a curved surface groove with a diameter depth of 250 nm, and the specific implementation steps are as follows:

[0039] (1) Deposit a curved multilayer film structure on the prepared curved groove. Deposition by evaporation coating, alternate deposition of metal Ag and dielectric SiO 2 , where the metal Ag is deposited by thermal evaporation, and the dielectric SiO 2 Deposited by electron beam evaporation. The film thickness of each layer is 30nm. A total of 8 groups of 16 layers were deposited, with a total film thickness of 480nm, such as figure 2 Shown; 1 represents metal Ag; 2 represents silicon dioxide.

[0040] (2) Planarization is carried out by coating AR-P3120 photoresist sol layer, the rotation speed is 5000rpm, the suspension coating time is 40s, and baked on a hot plate at 100°C for 1h. The glue thickness is 600nm, such as image 3 Shown; 3 represents t...

Embodiment 3

[0045] Example 3, such as figure 1 As shown, a nanolaser laser beam combining device is prepared on a curved surface groove with a diameter depth of 300nm, and the specific implementation steps are as follows:

[0046] (1) Deposit a curved multilayer film structure on a curved groove. Magnetron sputtering was used to deposit metal Ag and medium SiO2 alternately, wherein metal Ag was deposited by DC sputtering with a DC power of 120w; medium SiO2 was deposited by radio frequency sputtering with a deposition power of 200w. The film thickness of each layer is 15nm. A total of 20 groups of 40 layers were deposited, with a total film thickness of 600nm, such as figure 2 Shown; 1 represents metal Ag; 2 represents silicon dioxide.

[0047] (2) Planarization is carried out by coating AR-P3170 photoresist, the rotation speed is 2000rpm, the spin coating time is 40s, and the coating is repeated 5 times. Bake on a hot plate at 120 °C for 1 h. The glue thickness is 600nm, such as ...

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Abstract

The invention provides a manufacturing method of a nanometer laser device laser-bundling device. The manufacturing method comprises the steps of manufacturing a hook face multilayer film, carrying out planarization on the hook face multilayer film, thinning the hook face multilayer film, coating and solidifying a sol layer, depositing a metal Ag layer on the sol layer, repeatedly coating the sol layer with the deposited Ag layer, and finally obtaining the nanometer laser device laser-bundling device. According to the nanometer laser device laser-bundling device, a manual material structure is used for achieving directional coupling and transmission on laser bundles, the shortcoming that the laser power of a single nanometer laser device is limited is overcome, and bundling on multiple bundles of lasers is further achieved.

Description

technical field [0001] The invention relates to a method for preparing a laser beam combining device, in particular to a preparation method for a laser beam combining device of a nanometer laser. Background technique [0002] The birth of the first ruby ​​laser in 1960 is one of the most important inventions of the 20th century. For more than half a century, lasers are developing rapidly towards smaller volume, faster modulation speed, higher power, higher efficiency, and lower cost. In 2001, researchers at the University of California, Berkeley produced the world's smallest laser, a zinc oxide nanolaser, on a nano-optic wire that is only one-thousandth the size of a human hair. This is a major practical application since the birth of nanotechnology. This kind of nanolaser has broad application prospects in optical interconnection of information transmission, biological detection, medical treatment, nanolithography processing, data storage and other fields. [0003] Howev...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/20B82Y20/00
Inventor 罗先刚王彦钦王长涛赵泽宇沈同圣罗云飞胡承刚黄成杨磊磊潘思洁崔建华赵波
Owner INST OF OPTICS & ELECTRONICS - CHINESE ACAD OF SCI
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