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Film bulk acoustic resonator and method for manufacturing same

A thin-film bulk acoustic wave and resonator technology, applied to electrical components, impedance networks, etc., can solve problems such as poor thickness uniformity and affect the resonant frequency of thin-film bulk acoustic wave resonators, and achieve a highly consistent effect

Inactive Publication Date: 2013-11-27
张家港恩达通讯科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] For this reason, the technical problem to be solved by the present invention is that the thickness uniformity of the thin film bulk acoustic resonator prepared in the prior art is poor, which affects the stability of the resonant frequency of the thin film bulk acoustic resonator, thereby proposing a kind of resonant frequency that does not depend on Thin Film Bulk Acoustic Resonator with Device Thickness

Method used

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  • Film bulk acoustic resonator and method for manufacturing same
  • Film bulk acoustic resonator and method for manufacturing same
  • Film bulk acoustic resonator and method for manufacturing same

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Effect test

Embodiment 1

[0053] This embodiment provides a thin film bulk acoustic resonator, such as Figure 2a As shown, it includes a substrate layer 1 and an annular functional layer 2 prepared on the substrate layer 1; the annular functional layer 2 includes a first electrode 201 along a direction away from the substrate layer 1, a piezoelectric material layer 202 and a second Two electrodes 203 ; an air cavity 101 is set on the substrate layer 1 , and the area of ​​the air cavity 101 in the lateral direction is larger than the area surrounded by the outer boundary of the annular functional layer 2 . The horizontal direction mentioned here refers to the direction parallel to the first electrode 201 , that is, the direction perpendicular to the direction of the applied electric field.

[0054] combine Figure 2b to Figure 2d In this embodiment, the annular structure of the annular functional layer 2 includes but is not limited to a circular annular structure, a square annular structure, and a pol...

Embodiment 2

[0066] This embodiment provides a method for preparing a thin film bulk acoustic resonator, including the following steps:

[0067] S1: select the substrate substrate to obtain the substrate layer 1.

[0068] S2: Prepare ring-shaped functional layer 2: prepare ring-shaped first electrode 201 , ring-shaped piezoelectric material layer 202 and ring-shaped second electrode 203 on the substrate layer 1 .

[0069] S3: At the position below the first electrode 201 on the substrate layer 1, etch away the base material of the substrate to form an air cavity 101, the area of ​​the air cavity 101 is larger than that of the annular functional layer 2 in the lateral direction The area enclosed by the outer boundary.

[0070] After the step S3 is completed, an air cavity 101 is formed under the annular functional layer 2, and when the air cavity is formed by etching, two or more fixing feet 4 will be reserved for the annular functional layer 2 fixed. The positions and numbers of the fix...

Embodiment 3

[0089] This embodiment provides a filter and an oscillator using the thin film bulk acoustic resonator described in Embodiment 1. And a radio frequency module, including a duplexer or a multiplexer, the thin film bulk acoustic resonator in the duplexer or the multiplexer adopts the thin film bulk acoustic resonator described in Embodiment 1 or Embodiment 2.

[0090]Among them, the filter realizes functions such as image elimination, parasitic filtering and channel selection in the wireless transceiver device. The filter made by FBAR device has the characteristics of high quality factor and easy realization of miniaturization. In order to improve frequency selectivity, more combinations of FBAR devices with resonators with different resonant frequencies are required. Currently, Figure 5 The ladder structure shown.

[0091] There is a wide demand for low-jitter clocks and oscillators in wired and wireless communications. Oscillators based on FBAR devices have advantages in s...

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Abstract

The invention provides a film bulk acoustic resonator, a method for manufacturing the film bulk acoustic resonator and a filter, an oscillator and a radio frequency module which respectively comprise the film bulk acoustic resonator. According to the film bulk acoustic resonator, a function layer is arranged to be of an annular structure, so that after vertical voltage is applied to a piezoelectric material through a first electrode and a second electrode, sound waves perpendicular to an electric field, namely the sound waves in the horizontal direction, are stimulated by the utilization of the d31 piezoelectric coefficient of the piezoelectric material, and therefore the resonant frequency is related to the width of a device, namely the width of the piezoelectric material. In an existing integrated circuit micromachining technology, the control precision of plane sizes is far higher than the control precision of thicknesses, for example, through the CMOS65 nanometer technology, very accurate 65-nanometer plane nodes can be realized and the precision of the nodes can reach the nanometer level, so that the FBAR can guarantee that the resonant frequencies of resonators on the same wafer are highly uniform, and therefore the processing difficulty of the device is greatly lowered and the yield is greatly improved.

Description

technical field [0001] The invention relates to the technical field of wireless communication devices. Specifically, it relates to a film bulk acoustic resonator, a preparation method thereof, and a filter, an oscillator and a radio frequency module including the film bulk acoustic wave resonator. Background technique [0002] With the development of thin film and micro-nano manufacturing technology, electronic devices are developing rapidly in the direction of miniaturization, high-density multiplexing, high frequency and low power consumption. The Film Bulk Acoustic Resonator (FBAR: Film Bulk Acoustic Resonator) developed in recent years adopts an advanced resonance technology, which converts electrical energy into sound waves through the inverse piezoelectric effect of piezoelectric films to form resonance. FBAR devices have the characteristics of small size, low cost, high quality factor, strong power tolerance, high frequency (up to 1-10GHz) and compatibility with IC t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03H3/02H03H9/17
Inventor 朱欣恩
Owner 张家港恩达通讯科技有限公司
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