Power semiconductor module assembled through three-dimensional structural units

Abstract

The invention provides a power semiconductor module assembled through three-dimensional structural units. The power semiconductor module is assembled mechanically through the multiple three-dimensional structural units (6). An emitting electrode of one three-dimensional structural unit is connected with a collector electrode of another three-dimensional structural unit in series through a connector to form a half-bridge unit, and the multiple half-bridge units are in parallel connection. Each three-dimensional structural unit (6) of the power semiconductor module is composed of an all-control type power semiconductor chip (10a), a non-control type power semiconductor chip (10b), a first substrate (1) and a second substrate (5), wherein the all-control type power semiconductor chip (10a) and the non-control type power semiconductor chip (10b) are located between the first substrate (1) and the second substrate (5) and arranged side by side, and a grid electrode (10a2) of the all-control type power semiconductor chip (10a) is located at one corner of the non-control type power semiconductor chip (10b). The power semiconductor module is filled with insulation cooling liquid to be cooled.

Description

technical field [0001] The invention relates to a three-dimensional packaged power semiconductor module. Background technique [0002] In recent years, with the development of new energy technology, high-power converters have been widely used. The heat dissipation capability of the inverter becomes a core issue of common concern. The junction temperature of the chip of the power semiconductor module may reach 175°C or even higher during operation. Excessively high chip junction temperature will greatly reduce the number of cycles of the power semiconductor module and further reduce the service life of the module. [0003] In current power semiconductor modules, metal bonding wires are used for the connection between IGBTs and diodes. This method is likely to cause peeling of bonding wires due to thermal fatigue under high temperature conditions, which greatly reduces the reliability of the module. In this traditional packaging structure, bonding wires are used on the front...

AI Technical Summary

Problems solved by technology

The junction temperature of the power semiconductor module chip may reach 175°C or even higher during operation. Excessively high chip junction temperature will greatly reduce the number of cycles of the power semiconductor module and reduce the service life of the module.

[0003] In current power semiconductor modules, metal bonding wires are used for the connection between IGBTs and diodes. This method easily causes the bonding wires to peel off due to thermal fatigue under high temperature conditions, which greatly reduces the reliability of the module.

In this traditional packaging structure, bonding wires are used on the front side of the chip for electrical interconnection. Therefore, the chip as a heat source can only dissipate heat by soldering DBC and copper base plate structure on the back side, while the heat dissipation efficiency of the traditional single-sided heat dissipation structure is very limited.

[0004] In addition, due to the uneven cooling channel structure of high heat flux power devices, the uneven temperature distribution on the surface of the heat source chip is more prominent

The current modules are generally packaged by direct soldering to the copper base plate, which makes the failure of a certain unit lead to the scrapping of the entire module, and the other intact unit parts cannot be further used, which increases the cost of use

[0005] The power semiconductor modules proposed in US patents US0138452A1 and US7005743B2 adopt the method of double-sided cooling, which improves the cooling effect of the module, but the gate of the power semiconductor chip described in this patent is drawn out by bonding wires, and the entire packaging process is still not Get rid of the dependence on bonding wires, which increases the process complexity of packaging

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