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Temperature measurement structure suitable for growing SiC crystal system by PVT (physical vapor transportation) method

A technology of crystal and temperature measuring tube, which is applied in the field of temperature measurement in the growth process of SiC crystal, can solve the problems of affecting the temperature gradient of the growth system and the blockage of the temperature measuring hole, so as to avoid the temperature gradient change, improve the yield, and avoid polytype defects. Effect

Inactive Publication Date: 2013-10-30
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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Problems solved by technology

[0006] The temperature measuring structure of the present invention is based on the PVT method to grow SiC crystal system, which can solve the problem that the temperature measuring hole is blocked during the growth process and affects the temperature gradient of the growth system

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  • Temperature measurement structure suitable for growing SiC crystal system by PVT (physical vapor transportation) method
  • Temperature measurement structure suitable for growing SiC crystal system by PVT (physical vapor transportation) method
  • Temperature measurement structure suitable for growing SiC crystal system by PVT (physical vapor transportation) method

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Embodiment Construction

[0028] The present invention will be further described with reference to the accompanying drawings and the following embodiments. It should be understood that the accompanying drawings and the following embodiments are only used to illustrate the present invention rather than limit the present invention.

[0029] figure 1 It is a schematic diagram of a growth system for growing SiC crystals by the known physical vapor transport method. Such as figure 1 The known physical vapor transport method for growing SiC crystals has a crystal growth chamber surrounded by a crucible 5, a seed crystal support 2 arranged on the top of the growth chamber, and a crystal growth chamber around the crystal growth chamber. Insulation layer 6. Usually graphite crucible 5 is used, SiC raw material 4 is placed in the lower part of the growth chamber, and seed crystal support 2 with seed crystal 3 fixed is fixed on the top of the growth chamber surrounded by crucible 5 . By controlling the tempera...

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Abstract

The invention discloses a temperature measurement structure suitable for growing a SiC crystal system by a PVT (physical vapor transportation) method. The system comprises a crystal growth chamber, a seed crystal support and a thermal insulation layer, wherein the crystal growth chamber is surrounded by a crucible and is used for the crystal growth; the seed crystal support is configured on the top in the growth chamber; the thermal insulation layer is arranged on the outer periphery of the growth chamber; the temperature measurement structure comprises an open hole which is formed in the thermal insulation layer above the seed crystal support on the top in the growth chamber and can be utilized for measuring the temperature in the crystal growth chamber by using a high-temperature infrared temperature measurement meter as well as a temperature measurement pipe which is inserted through the open hole and is formed on the seed crystal support. The temperature measurement structure provided by the invention can measure the temperature of the top of the crucible accurately during the crystal growth process so as to control the temperature accurately, also can prevent the temperature gradient variation caused by the blocking of the temperature measurement hole, and can improve the finished product rate of crystal growth.

Description

technical field [0001] The invention relates to temperature measurement during the SiC crystal growth process, in particular to a temperature measurement structure suitable for a SiC crystal growth system by a physical vapor transportation (PVT) method. Background technique [0002] As a third-generation semiconductor material, SiC crystal has high hardness (second only to diamond), high thermal conductivity, low thermal expansion coefficient, large band gap, high saturation drift velocity, strong critical breakdown field, high chemical stability, and It has a series of advantages such as strong radiation ability, and at the same time, its lattice constant mismatch with GaN is small, so it is more suitable as a substrate material for GaN epitaxial growth. Excellent properties make SiC crystals have broad application prospects in aerospace, information technology, LED lighting device epitaxial substrates and other civil and national defense security fields. [0003] SiC crys...

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Application Information

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IPC IPC(8): C30B23/00
Inventor 孔海宽忻隽陈建军严成锋刘熙肖兵杨建华施尔畏
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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