Method and device for purifying and recycling emitted argon in preparation process of monocrystalline silicon
The technology of a preparation process and a recovery method is applied in the field of argon gas emission in the preparation process of purifying and recovering single crystal silicon, which can solve the problems of inability to realize large-scale industrial application, high cost, easy deactivation, etc., and save energy consumption, operation and maintenance. Convenient, easy-to-control and reliable effects
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[0040] The present invention will be described in detail below in conjunction with the accompanying drawings and examples: a method for purifying and recovering exhausted argon in a single crystal silicon production process according to the present invention, the method includes the following steps:
[0041] a) Collect the crude argon gas discharged from the monocrystalline silicon furnace and perform compression degreasing treatment,
[0042] b) Use catalytic oxidation to remove carbon monoxide and alkanes in crude argon,
[0043] c) Remove the oxygen in the crude argon by hydrogenation and deoxygenation,
[0044] d) Remove the carbon dioxide and moisture in crude argon and air respectively by adsorption method,
[0045] e) Use high- and low-pressure double-tower cryogenic rectification methods to produce pure nitrogen and high-purity argon respectively.
[0046] In the step a), the crude argon gas discharged from the single crystal silicon furnace is collected and th...
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