Etching-based one-dimensional electron gas gan-based hemt device and fabrication method

Abstract

The invention discloses an etching-based one-dimensional electron gas GaN-based HEMT (high electron mobility transistor) device and preparation method thereof, and mainly solves the problems that the conventional one-dimensional electron gas device has low high-temperature and high-pressure characteristics, frequency characteristics and power characteristics. The device comprises a substrate, a buffering layer, a potential barrier layer, a passivation layer and a protection layer from top to bottom; the two ends of the potential barrier layer are respectively a source and a drain; the passivation layer is positioned on the potential barrier layer between the source and the drain; a gate groove is formed in the passivation layer; and a gate is arranged in the gate groove. A plurality of quantum wire grooves which are arranged uniformly are etched on the potential barrier layer so as to obtain a plurality of quantum wire bosses with the width of nanoscale; and one-dimensional electron gas is formed in heterogenous junctions of the quantum wire bosses. The buffering layer adopts GaN; and the potential barrier layer adopts AlGaN. Compared with a Si-based device and a GaAs-based device, the etching-based one-dimensional electron gas GaN-based HEMT device has high high-temperature and high-pressure characteristics, frequency characteristics and power characteristics, and can be used for manufacturing ultrahigh speed low-power consumption one-dimensional electron gas devices.

Description

technical field [0001] The invention belongs to the technical field of microelectronics and relates to a semiconductor device, in particular a one-dimensional electron gas HEMT device based on a GaN semiconductor material heterojunction structure, which can be used as a basic device of a microwave, millimeter wave communication system and a radar system. Background technique [0002] III-V compound semiconductor materials are the third-generation semiconductor materials that have been developed rapidly for more than ten years, such as GaN-based, GaAs-based, InP-based and other semiconductor materials, which have a large band gap and can be combined with InN, AlN, etc. Alloy semiconductors are formed to make their forbidden band width adjustable. People usually use these III-V compound semiconductor materials to form various heterojunction structures. Due to the large difference in the forbidden band width of the III-V compound semiconductor materials on both sides of the het...

AI Technical Summary

Problems solved by technology

However, due to the poor material properties of Si and GaAs semiconductors, the one-dimensional electron gas characteristics are far below ideal

First of all, due to the small bandgap width of Si and GaAs semiconductor materials, the intrinsic carrier concentration is high and the breakdown electric field is small, which makes the prepared Si-based and GaAs-based devices have poor high-temperature and high-voltage characteristics and poor radiation resistance. Secondly, due to the poor electron transport characteristics of Si and GaAs semiconductor materials, the frequency characteristics of Si-based and GaAs-based devices prepared are poor; finally, due to the poor polarization characteristics of Si and GaAs semiconductor materials when forming heterojunctions Poor, the electron concentration is greatly limited, making the prepared Si-based and GaAs-based devices have poor power characteristics

Images