Laterally overgrown one-dimensional electron gas gan-based hemt device and its fabrication method
An electron gas and overgrowth technology, applied in the field of microelectronics, can solve the problems of high temperature and high pressure resistance, frequency characteristics and poor power characteristics, and achieve the effects of high electron concentration, high electron mobility, high frequency and power range
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Embodiment 1
[0068] The device structure of Embodiment 1 is: substrate 1 is sapphire, buffer layer 2 is GaN, barrier layer 4 is AlGaN, passivation layer 8 is SiN, protective layer 9 is SiN, masking layer strip 3 is SiN, masking layer strip The thickness of 3 is 10nm, the width is 50nm, the interval between every two masking layer strips 3 is 10nm, and the masking layer strips 3 are arranged periodically;
Embodiment 2
[0069] The device structure of Example 2 is: the substrate 1 is silicon carbide, the buffer layer 2 is GaN, the barrier layer 4 is AlGaN, the passivation layer 8 is SiN, and the protective layer 9 is SiO 2 , the masking layer strips 3 are SiN, the thickness of the masking layer strips 3 is 30nm, the width is 250nm, the interval between every two masking layer strips 3 is 50nm, and the masking layer strips 3 are arranged periodically;
Embodiment 3
[0070] The device structure of Example 3 is: the substrate 1 is silicon, the buffer layer 2 is GaN, the barrier layer 4 is AlGaN, and the passivation layer 8 is SiO 2 , the protective layer 9 is SiN, the masking layer strips 3 are SiN, the thickness of the masking layer strips 3 is 50nm, the width is 500nm, the interval between every two masking layer strips 3 is 100nm, and the masking layer strips 3 are arranged periodically ;
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