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Method for improving diffusion quality by changing polycrystalline silicon slice phosphorus source components

A polycrystalline silicon wafer, phosphorus source technology, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of oxidation stacking fault defects, efficiency drop, etc., to improve diffusion quality, increase minority carrier lifetime, and enhance absorption The effect of miscellaneous effects

Inactive Publication Date: 2013-10-23
YINGLI ENERGY CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In order to generate phosphorus pentoxide that can react with silicon during diffusion, a sufficient amount of oxygen must be introduced at the same time as phosphorus oxychloride, but in the high-temperature oxygen atmosphere, due to the material defects of polysilicon itself, oxidation piles are prone to occur. Stacking fault defects, which are easy to form recombination centers, make photogenerated carriers recombine needlessly, resulting in a decrease in efficiency

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] Embodiment 1: A method for improving the diffusion quality by changing the phosphorus source composition of polycrystalline silicon wafers, comprising the following steps:

[0021] (1): Add 1% phosphorus trichloride to phosphorus oxychloride as a phosphorus source.

[0022] (2): Place the textured polysilicon wafer in a diffusion furnace, and when the temperature in the furnace tube is stabilized at 800°C, inject oxygen for 5 minutes at a speed of 500 sccm.

[0023] (3): Through-source deposition, the mixed gas of nitrogen carrying phosphorus source at a rate of 500 sccm and oxygen at a rate of 300 sccm is introduced, and the deposition time is 10 min.

[0024] (4): The temperature of the diffusion furnace is maintained at 800°C for 10 minutes to diffuse the deposited phosphorus into the silicon wafer.

[0025] After quasi-steady-state photoconductivity test, the minority carrier lifetime of the silicon wafer can reach 9 microseconds.

Embodiment 2

[0026] Embodiment 2: A method for improving the diffusion quality by changing the phosphorus source composition of polycrystalline silicon wafers, comprising the following steps:

[0027] (1): Add 3% phosphorus trichloride to phosphorus oxychloride as a phosphorus source.

[0028] (2): Place the textured polysilicon wafer in a diffusion furnace. When the temperature in the furnace tube is stabilized at 850°C, inject oxygen for 8 minutes at a rate of 1500 sccm.

[0029] (3): Through-source deposition, nitrogen gas with phosphorus source at a rate of 1500 sccm and oxygen at a rate of 700 sccm are introduced into the mixed gas, and the deposition time is 15 minutes.

[0030] (4): The temperature of the diffusion furnace is maintained at 850°C for 13 minutes to diffuse the deposited phosphorus into the silicon wafer.

[0031] After quasi-steady-state photoconductivity test, the minority carrier lifetime of the silicon wafer can reach 9 microseconds.

Embodiment 3

[0032] Embodiment 3: A method for improving the diffusion quality by changing the composition of the phosphorus source of polycrystalline silicon wafers, comprising the following steps:

[0033] (1): Add 5% phosphorus trichloride to phosphorus oxychloride as a phosphorus source.

[0034] (2): Place the textured polysilicon wafer in a diffusion furnace. When the temperature in the furnace tube is stabilized at 900°C, inject oxygen for 10 minutes at a rate of 2000 sccm.

[0035] (3): Through-source deposition, nitrogen carrying phosphorus source at a rate of 2000sccm and oxygen at a rate of 1000sccm are introduced, and the deposition time is 20 minutes.

[0036] (4): The temperature of the diffusion furnace is maintained at 900°C for 15 minutes to diffuse the deposited phosphorus into the silicon wafer.

[0037] After quasi-steady-state photoconductivity test, the minority carrier lifetime of the silicon wafer can reach 9 microseconds. 1%-5% refers to the mass percentage of ph...

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Abstract

The invention discloses a method for improving diffusion quality by changing polycrystalline silicon slice phosphorus source components, and relates to the technical field of methods for manufacturing semiconductor devices. The method includes the following steps that (1) phosphorus trichloride is added in phosphorus oxychloride and used as a phosphorus source; (2) oxidization: polycrystalline silicon slices with the manufactured suede are placed in a diffusion furnace, and oxygen is added in the diffusion furnace; (3) deposition: mixed gas of the phosphorus source and the oxygen is added in the diffusion furnace; (4) diffusion: the diffusion furnace is kept at a certain temperature, and then deposited phosphorus silicon slices are diffused in the diffusion furnace. Through the method, the service life of minority carriers in the polycrystalline silicon slices is prolonged, the diffusion gettering effect is beneficially improved, damage to crystal lattices in the high temperature process is reduced, and then photoelectric conversion efficiency is improved.

Description

technical field [0001] The invention relates to the technical field of manufacturing methods of semiconductor devices. Background technique [0002] Energy is the foundation and premise of all economic development activities in the world. In this era of ever-changing technological levels, human needs and dependence on energy are becoming stronger and stronger. According to statistics, all proven oil reserves in the world will be exhausted in 60 years, and mankind will face a severe test of survival at that time; and the global financial crisis is also closely related to energy factors. Only by strengthening the development of renewable energy and improving the efficiency of energy utilization, and getting rid of the dependence on traditional energy, can we solve the problem fundamentally. It is predicted that the fourth scientific and technological revolution of mankind has been brewing in the world financial crisis, and new energy will be the key breakthrough of this revol...

Claims

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Application Information

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IPC IPC(8): H01L21/228
Inventor 马桂艳
Owner YINGLI ENERGY CHINA
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