Constant temperature device convenient for improving single crystal diffusion

Abstract

The invention relates to a constant temperature device convenient for improving single crystal diffusion, which comprises a main body mechanism and a waste gas treatment mechanism, the main body mechanism comprises a diffusion furnace main body, a furnace door, a heat preservation barrel, a baffle plate, a sliding way, a quartz boat and a TC tube, the furnace door is arranged on one side of the diffusion furnace main body, and meanwhile the heat preservation barrel is arranged on the inner side of the furnace door; the slide way and a TC tube are arranged in the diffusion furnace main body, a quartz boat is arranged on the slide way, the TC tube is connected with the inner bottom of the diffusion furnace main body, the diffusion furnace main body is connected with the constant temperature mechanism, the waste gas treatment mechanism is arranged on one side of the diffusion furnace main body, and the waste gas treatment mechanism is connected with the waste heat treatment mechanism. According to the constant-temperature device convenient for improving single crystal diffusion, the electric heating wire is arranged and can be used for preheating gas entering the diffusion furnace main body, so that the condition that the temperature in the diffusion furnace main body is in a certain fixed range when the gas is filled into the diffusion furnace main body, namely a relatively constant-temperature condition is achieved is conveniently ensured, and diffusion of a machined part is conveniently promoted.

Description

technical field [0001] The invention relates to the technical field of semiconductor processing, in particular to a constant temperature device for improving single crystal diffusion. Background technique [0002] Single crystal is a kind of semiconductor. At the same time, it needs to use diffusion furnace during its processing. Diffusion furnace is one of the important process equipment in the front process of semiconductor production line. It is used for large-scale integrated circuits, discrete devices, power electronics, and optoelectronic devices. Diffusion, oxidation, annealing, alloying and sintering processes in industries such as optical fiber and optical fiber. At the same time, the role of the diffusion furnace is to dope semiconductors, that is, to dope materials (various types of chemical gases and other substances) under high temperature conditions. Diffusion into the semiconductor, so as to change and control the type, concentration and distribution of impuri...

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Problems solved by technology

[0003] The purpose of the present invention is to provide a constant temperature device that facilitates the diffusion of single crystals, so as to solve the problem that most of the existing diffusion furnaces proposed in the above-mentioned background technology are inconvenient to process waste gas and waste heat carried by the waste gas during processing, thus easily polluting the environment On the other hand, the existing diffusion furnace cannot control the temperature in the diffusion furnace when gas is filled, which makes the diffusion effect of the workpiece poor

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