A kind of fabrication method of electric injection gan-based resonator

Abstract

The invention discloses a manufacturing method of an electrically injected GaN-based resonant cavity, which relates to a GaN-based resonant cavity luminescent device. The method comprises the steps of growing a p type current expanding layer ITO on a GaN-based epitaxial wafer with a sapphire substrate, sequentially carrying out etching, polishing and ICP (Inductively Coupled Plasma) etching on the surface of the p type current expanding layer ITO to form a n type table facet, manufacturing a current limiting layer, a n type metal contact layer, a p type metal contact layer and a top dielectric film DBR (Distributed Bragg Reflector), bonding the components with a temporary substrate, removing the sapphire substrate by a laser lift-off technology, grinding and polishing the GaN surface subjected to laser lift-off, growing a bottom dielectric film DBR on the polished GaN surface, bonding the obtained component with a permanent substrate, and removing the temporary substrate, thus completing the manufacturing of the electrically injected GaN-based resonant cavity. The high-performance GaN-based resonant cavity is realized by adopting the two high-quality dielectric film DBRs and the low-loss p type current expanding layer ITO.

Description

technical field [0001] The invention relates to a GaN-based resonant cavity light-emitting device, in particular to a GaN-based resonator that uses two high-quality dielectric films DBR and a p-type current expansion layer ITO with less loss to realize a high-performance GaN-based resonant cavity. cavity method. Background technique [0002] GaN-based semiconductor materials mainly include GaN, InN, AlN and their ternary or quaternary alloys, which have stable mechanical and chemical properties, and belong to the direct transition energy band structure, and can emit light covering the entire visible light band. Ideal material. These devices have broad application prospects in the fields of general lighting, optical fiber communication, high-density optical storage, laser display and laser printing, among which GaN-based resonant cavity light-emitting diodes (RCLEDs) and vertical cavity surface-emitting lasers (VCSELs) are currently research hotspots. [0003] Due to the u...

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Problems solved by technology

Secondly, the extremely low carrier concentration of p-GaN material makes it difficult for holes to expand laterally effectively in the p-type layer, so the semi-transparent conductive layer ITO must be used as the current spreading layer when making the p-type electrode

However, ITO also has a large optical absorption loss, which will rapidly reduce the quality factor (Q value) of the cavity and seriously affect the performance of the resonator.

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