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Method for manufacturing high dielectric composite thin film

A technology of composite film and flat film, which is applied in the field of electronic functional materials, can solve the problems of limited application and low dielectric constant, and achieve the effects of low raw material cost, high dielectric constant value, and low dielectric loss value

Inactive Publication Date: 2015-07-22
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the existing polymer dielectric film as the main material of film capacitors has the advantages of good flexibility, light weight, high voltage resistance, impact resistance, etc., but its own low dielectric constant limits its application.

Method used

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  • Method for manufacturing high dielectric composite thin film

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0057] (1) Weigh 2 g of micro-barium titanate and 0.5 g of nano-strontium titanate, and mix them by ball milling for 2 hours to obtain nano-mixed powder A1;

[0058] (2) Weigh 2.5g of polyvinylidene fluoride powder, and ball mill and mix with the above-mentioned 2.5g of nano-mixed powder A1 for 2 hours to obtain mixed material powder B1;

[0059] (3) Add the mixed material powder B1 into 15ml of N,N-dimethylformamide (DMF), and stir thoroughly under ultrasonic for 3 hours until the polyvinylidene fluoride powder is completely dissolved to obtain a viscous organic mixed solution C1;

[0060] (4) Put the organic mixed solution C1 at room temperature for 3 hours under vacuum for degassing to obtain a bubble-free mixed solution D1;

[0061] (5) Cast and scrape the bubble-free mixed solution D1 on a glass plate to make a flat film E1 with a thickness of about 150 μm;

[0062] (6) Remove the solvent from the flat film E1 at 60°C for 8 hours in a vacuum, and after the film falls off...

example 2

[0065] (1) Weigh 2 g of micro-barium titanate and 0.5 g of nano-strontium titanate, and mix them by ball milling for 2 hours to obtain nano-mixed powder A2;

[0066] (2) Weigh 12.5g of polyvinylidene fluoride powder, and ball mill and mix with the above-mentioned 2.5g of nano-mixed powder A2 for 3 hours to obtain mixed material powder B2;

[0067] (3) Add the mixed material powder B2 to 75ml of N,N-dimethylformamide (DMF), and stir thoroughly under ultrasonic for 4 hours until the polyvinylidene fluoride powder is completely dissolved, and a viscous organic mixed solution C2 is obtained;

[0068] (4) Put the organic mixed solution C2 at room temperature in vacuum for 5 hours for degassing to obtain a bubble-free mixed solution D2;

[0069] (5) Cast and scratch the bubble-free mixed solution D2 on a glass plate to make a flat film E2 with a thickness of about 150 μm;

[0070] (6) Remove the solvent from the flat film E2 at 60°C for 8 hours in a vacuum. After the film falls off...

example 3

[0073] (1) Weigh 5 g of micro-barium titanate and 0.5 g of nano-strontium titanate, and mix them by ball milling for 2 hours to obtain nano-mixed powder A3;

[0074] (2) Weigh 5.5g of polyvinylidene fluoride powder, and ball mill and mix with the above-mentioned 5.5g of nano-mixed powder A3 for 4 hours to obtain mixed material powder B3;

[0075] (3) Add the mixed material powder B3 into 33ml of N,N-dimethylformamide (DMF), and stir thoroughly under ultrasonic for 3 hours until the polyvinylidene fluoride powder is completely dissolved, and a viscous organic mixed solution C3 is obtained;

[0076] (4) Put the organic mixed solution C3 at room temperature for 3 hours in vacuum to defoam, and obtain the mixed solution D,3 without bubbles;

[0077] (5) Cast and scrape the bubble-free mixed solution D3 on a glass plate to make a flat film E3 with a thickness of about 150 μm;

[0078] (6) Remove the solvent from the flat film E3 in vacuum at 60°C for 24 hours. After the film falls...

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Abstract

The embodiment of the invention discloses a method for manufacturing a high dielectric composite thin film. The method comprises the following steps of: uniformly mixing micron barium titanate, nano strontium titanate and polyvinylidene fluoride powder; dissolving the mixed material powder in an organic solvent; carrying out standing vacuum defoaming on organic mixed solution at the room temperature; carrying out casting knifing on the organic mixed solution on a substrate to form a flat plate film; and heating the flat plate film so that the organic solvent is evaporated to obtain a polyvinylidene fluoride-barium titanate-strontium titanate composite thin film. With the adoption of the method of the embodiment of the invention, strontium titanate particles with nano partical sizes can be filled in gaps among barium titanate particles with micron particle sizes, the barium titanate particles can be stacked more closely, and therefore, a dielectric constant of the obtained composite thin film can be improved greatly and loss can be reduced.

Description

technical field [0001] The invention relates to the technical field of electronic functional materials, in particular to a method for manufacturing high dielectric composite films. Background technique [0002] In recent years, with the rapid development of electronic technology, dielectric materials with high dielectric constants have played an irreplaceable important role in electrical materials, energy storage devices, power engineering, and in the microelectronics industry. However, the existing polymer dielectric film, which is the main material of film capacitors, has the advantages of good flexibility, light weight, high voltage resistance, impact resistance, etc., but its own low dielectric constant limits its application. Contents of the invention [0003] One of the objects of the present invention is to provide a method for manufacturing a high dielectric composite thin film having both high dielectric constant and low loss performance. [0004] The technical s...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C08J5/18C08L27/16C08K3/24
Inventor 徐建华张辉杨文耀李金龙张鲁宁杨亚杰
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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