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Producing method for full-tantalum-gas sealed capacitor

A capacitor and hermetic sealing technology, which is applied in capacitors, electrolytic capacitors, circuits, etc., can solve the problems of poor surface smoothness, high equivalent series resistance, and large capacitance changes, etc., achieve slow and uniform temperature rise, and improve electric capacity. performance, anti-crystallization effect

Active Publication Date: 2013-09-18
CHINA ZHENHUA GRP XINYUN ELECTRONICS COMP ANDDEV CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For capacitor products manufactured by this method, the dielectric oxide film on the surface of the anode tantalum block has defects such as low strength, poor density, and poor surface smoothness. Therefore, the equivalent series resistance of the capacitor product is high, the leakage current is large, and the impedance is high. Capacitance changes greatly

Method used

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  • Producing method for full-tantalum-gas sealed capacitor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] 1) Mix the tantalum powder heated to 90°C with sodium stearate, and mold it to a pressing density of 5.5g / ㎝ 3 The green body was calcined at 1650°C for 20 minutes to obtain an anode tantalum block;

[0028] 2) The anode tantalum block is immersed in the electrolyte solution mixed with phosphoric acid and ethylene glycol for electrochemical treatment. The initial voltage is 0.3 times the rated voltage of the capacitor, and the voltage is increased to 30V, and then press the boost current density of 0.22mA / CV to raise the voltage from 30V to 1.5 times of the rated voltage of the capacitor; the volume percent concentration of phosphoric acid in the electrolyte is 1%, and the volume percent concentration of ethylene glycol is 55 %, the rest is water;

[0029] 3) Put the electrochemically treated anode tantalum block into a vacuum of 2x10 -3 Heat treatment in a vacuum furnace above Torr at a temperature of 360°C for 25 minutes;

[0030] 4) The heat-treated anode tantalum ...

Embodiment 2

[0037] The steps are the same as in Example 1; wherein, the temperature of the tantalum powder in step 1) is 75°C, and the compacted density of the green body is 7.5g / ㎝ 3 , the calcination temperature is 1320°C, and the calcination time is 40 minutes; the initial voltage in step 2) is 0.15 times the rated voltage of the capacitor, the boost current density of the first boost is 0.35mA / CV, and the phosphoric acid in the electrolyte The volume percentage concentration is 0.5%, the volume percentage concentration of ethylene glycol is 70%, and the rest is water; the heat treatment temperature in step 3) is 340°C, and the heat treatment time is 30 minutes; the temperature of phosphoric acid in step 4) is 70°C, The concentration of phosphoric acid is 1%; the time in step 6) is 1 hour; the time in step 8) is 2 hours; the voltage applied to the capacitor in step 9) is the rated voltage of the capacitor, and the maintenance time is 96 hours.

Embodiment 3

[0039] The steps are the same as in Example 1; wherein, the temperature of the tantalum powder in step 1) is 85°C, and the compacted density of the green body is 6.5g / ㎝ 3 , the calcination temperature is 1485°C, and the calcination time is 30 minutes; the initial voltage in step 2) is 0.25 times the rated voltage of the capacitor, the boost current density of the first boost is 0.3mA / CV, and the phosphoric acid in the electrolyte The volume percentage concentration is 0.75%, the volume percentage concentration of ethylene glycol is 62%, and the rest is water; the temperature of phosphoric acid in step 4) is 85°C, and the concentration of phosphoric acid is 0.5%; the maintenance time in step 9) is 74 hours.

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Abstract

The invention discloses a producing method for a full-tantalum-gas sealed capacitor, belongs to a capacitor manufacture method and aims to provide a manufacture method for non-solid tantalum electrolytic capacitors. The method comprises calcining a green body with the press density ranging from 5.5g / cm3 to 7.5g / cm3 into an anode tantalum block, immersing the tantalum block in an electrolyte solution to perform electrochemical treatment according to a grading boosting mode, performing vacuum heat treatment on the anode tantalum block provided with dielectric oxidation film, immersing the anode tantalum in a phosphoric acid to perform secondary electrochemical treatment, cleaning and drying the anode tantalum block which is subjected to secondary electrochemical treatment, and packaging the anode block in a tantalum casing to be prepared into a capacitor product, putting the capacitor product in an aging device to perform heating and energizing aging. The capacitor product produced through the method has the advantages of being low in equivalent series resistance and impedance, small in leakage current and capacitance change and the like.

Description

technical field [0001] The invention relates to a method for manufacturing a non-solid all-tantalum electrolytic capacitor, in particular to a method for manufacturing a medium-low voltage large-capacity non-solid all-tantalum electrolytic capacitor. Background technique [0002] Non-solid all-tantalum electrolytic capacitors are one of the most widely used electronic components. At present, the manufacturing method of non-solid all-tantalum electrolytic capacitors is: immerse the anode tantalum block sintered in high temperature vacuum in an acidic solution for electrochemical treatment, so that a layer of tantalum pentoxide dielectric oxide film is formed on the surface of the anode tantalum block, and then Put the anode tantalum block into a tantalum casing filled with liquid electrolyte for welding and packaging, and finally weld the anode lead wire. For capacitor products manufactured by this method, the dielectric oxide film on the surface of the anode tantalum block ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01G9/00
Inventor 焉波方鸣王安玖冯建华王刚潘齐凤彭丹
Owner CHINA ZHENHUA GRP XINYUN ELECTRONICS COMP ANDDEV CO LTD
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