Vapor deposition mask
A mask and evaporation technology, applied in vacuum evaporation plating, sputtering plating, ion implantation plating and other directions, can solve the problem of inability to reach the substrate, improve service life, avoid board surface deformation, and improve uniformity Effect
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Embodiment 1
[0030] A mask for evaporation, such as figure 2 As shown, the thickness is 50 μm, and the shape is a quadrilateral Invar alloy plate, including an ITO surface 4 and an evaporation surface 5 that are in contact with an indium tin oxide (ITO) substrate. Through hole, the size of the opening 1 of the through hole on the ITO surface is smaller than the size of the opening 2 on the evaporation surface. Invar alloy is selected as the mask material, and the double-sided etching process is adopted. image 3 It is a schematic diagram of the cooperation between the mask plate and the ITO glass substrate.
[0031] 4 etch from the ITO side of the mask to form as figure 2 Opening 1 on the ITO surface of the middle mask, the depth of opening 1 is 15 μm, and the lateral dimension is 70 μm, etched from the evaporation surface 5 of the mask to form figure 2 Opening 2 on the evaporation surface, and ensure that the center of opening 2 on the evaporation surface coincides with the center o...
Embodiment 2
[0034]A mask for evaporation, with a thickness of 100 μm and a shape of a quadrilateral nickel-cobalt alloy plate, including an ITO surface in contact with an indium tin oxide (ITO) substrate and an evaporation surface, and the mask has a through ITO The size of the opening of the through hole on the ITO surface is smaller than the size of the opening on the evaporation surface.
[0035] The mask plate for evaporation is a quadrilateral nickel-cobalt alloy plate, the ITO surface opening depth of the mask plate is 25 μm, and the lateral dimension is 50 μm. The opening on the evaporation surface coincides with the center of the ITO surface opening of the template. The center of the opening is symmetrical, the depth is 75 μm, and the lateral dimension is 100 μm, and the opening wall on the evaporation surface has a certain concave arc, forming an evaporation angle of 30°. By separately controlling the etching time of the ITO surface and the evaporation surface, the required openi...
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