Alumina precursor solution, and preparation method and application thereof

Abstract

The invention discloses alumina precursor solution and a preparation method and application thereof. The preparation method comprises the following steps of: (a), adding anhydrous aluminium chloride in heated glacial acetic acid, and reacting at constant temperature for 8-10 min to obtain semi-transparent aluminium acetate colloid; (b), centrifuging the aluminium acetate colloid at a high speed for 10-15min in a high-speed centrifugal machine to obtain aluminium acetate particles; and (C), putting the aluminium acetate particles obtained in the step (b) into deionized water, acetone or alcohol solvent, so as to obtain a solution with the mass concentration of 20-40%, and oscillating or stirring to obtain the alumina precursor solution. The preparation method disclosed by the invention is simple and convenient to operate and low in cost; the prepared precursor solution can be stored for a long time, therefore, alumina and an alumina film prepared from the solution at a low temperature are excellent in performance; particularly, the film is uniform in thickness, continuous and dense and is applicable to the photoelectric and chemical fields.

Description

technical field [0001] The invention relates to an aluminum oxide precursor solution, its preparation method and the application of the solution in the preparation of aluminum oxide and aluminum oxide film. Background technique [0002] Alumina is a very ideal oxide material, which has strong volume effect, quantum size effect, surface effect and macroscopic quantum tunneling effect, and exhibits a series of excellent properties in many aspects such as light, electricity, thermodynamics and chemical reactions. Widely used in fine ceramics, composite materials, fluorescent materials, moisture-sensitive sensors and infrared absorption materials and other fields. Aluminum oxide film is non-toxic, has good dielectric constant and chemical stability, and low surface state density, and has a wide range of applications in the field of optoelectronics and chemistry, such as solar cells, thin film transistors, detectors, flash memory, memory, capacitors , inverters, light-emitting d...

AI Technical Summary

Problems solved by technology

[0004] Prior to the present invention, Xia disclosed an Al 2 o 3 The preparation method of the film: dissolving aluminum nitrate hydrate in ethylene glycol monomethyl ether to form a precursor solution, forming a film from the precursor solution by spin coating, and then annealing the film at 600°C to form Al 2 o 3 thin film, the heat treatment temperature of this preparation method is relatively high, and the heat treatment temperature directly affects the application range of aluminum oxide thin film (see: Xia.D.X; Xu.J.B. High mobility and low operating voltage ZnGaO and ZnGaLiO transistors with spin-coated Al2O3 as gate dielectric. J.Phys.D:Appl.Phys. 2010 43(44):442001); Chinese patent CN 102787309A discloses a preparation method of aluminum oxide thin film, first containing the precursor material of aluminum metal ion and stable The agent is dissolved in a solvent to form a precursor solution, and then heated to prepare a thin film. The raw material consumption is large. The most important thing is that the preparation temperature is high. It needs to be processed at 300°C or even 500°C, or at least 100 minutes at 200°C, and the properties of the product can be obtained. poor

Images