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Selective doping method for solar cell

A solar cell and selective technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of difficult control of the secondary distribution of impurities, uneven surface diffusion, and reduced battery efficiency, so as to achieve stable impurity distribution and reduce Destructive effect, effect of enhancing effect

Inactive Publication Date: 2013-06-19
NANTONG UNIVERSITY
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  • Summary
  • Abstract
  • Description
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  • Application Information

AI Technical Summary

Problems solved by technology

Among them, the two-step diffusion method is to firstly diffuse the top electrode area, and then lightly diffuse the entire emission area. Control; the screen phosphate slurry method is to use a screen to print a high-concentration phosphate slurry locally. Through its diffusion and volatilization, one diffusion can make the top electrode area form a heavy doping, and other areas form a light doping. However, due to the use of local Phosphorus slurry as a diffusion source will inevitably lead to uneven surface diffusion, which will reduce the efficiency of the battery
The diffusion mask method is to lightly dope first, then perform laser or photolithography masking, and then carry out secondary heavy doping on the top electrode area. This method reduces the selectivity of the top electrode area due to light doping first. The difference between the impurity concentration of the substrate and the substrate during doping can better control the selective doping area of ​​the battery, but laser or photolithography methods are required, which increases the cost and reduces the production efficiency
[0004] In summary, there are certain defects in the current main selective doping methods. Therefore, it is necessary to find a new type of selective doping solar cell production process.

Method used

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Examples

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Embodiment 1

[0035] Such as figure 1 Shown is a schematic flow chart of the selective doping method for solar cells of the present invention, which specifically includes the following steps:

[0036] 1a. Deposit a layer of phosphosilicate glass 1 (silicon dioxide film containing phosphorus element) with a thickness of about 0.05 microns on the upper surface of P-type single crystal silicon by magnetron sputtering. The phosphorus element in phosphosilicate glass 1 The concentration is 1e19 / cm 3 ;

[0037] 2a. Perform high-temperature diffusion on the deposited silicon wafer, so that the phosphorous elements in the phosphosilicate glass 1 diffuse into the silicon wafer to form a PN junction; the temperature of the high-temperature diffusion is 900° C., and the time of high-temperature diffusion is 5 minutes;

[0038] 3a. Retain the phosphosilicate glass 1 in the top electrode region by screen printing, and remove the phosphosilicate glass in other regions on the silicon wafer with hydroflu...

Embodiment 2

[0044] The steps of this example are the same as those of Example 1, the difference lies in the process parameters of high-temperature diffusion in dry oxygen environment in step 5a (step 5). In this example, the process temperature of high-temperature diffusion is 1000°C, and the duration is 5 minutes . After using the simulation software to simulate the second method of this embodiment, the impurities in the silicon wafer can be seen image 3 . The curves in the simulation result graph respectively represent the concentration of the doping element (phosphorus) and the position of the PN junction.

Embodiment 3

[0046] The steps of this example are the same as those of Example 1, the difference lies in the process parameters of high-temperature diffusion in dry oxygen environment in step 5a (the fifth step). In this example, the process temperature of high-temperature diffusion is 1100°C, and the duration is 2 minutes . After using the simulation software to simulate the third method of this embodiment, the impurities in the silicon wafer can be seen Figure 4 . The curves in the simulation result graph respectively represent the concentration of the doping element (phosphorus) and the position of the PN junction.

[0047]Comparing the three embodiments of the present invention, it can be seen from the simulation results that the PN junction of the battery is continuously deepened with the increase of the high-temperature diffusion temperature of the reverse diffusion process. The impurity concentration on the surface of the battery first increases and then decreases, but the impuri...

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Abstract

The invention relates to a selective doping method for a solar cell. The selective doping method includes the steps: depositing phosphorus silicon glass on the upper surface of a silicon slice; diffusing the deposited silicon slice at a high temperature and diffusing phosphorus into the silicon slice to form a PN junction; removing the phosphorus silicon glass outside a top electrode area of the upper surface of the silicon slice; depositing an intrinsic amorphous silicon layer on the upper surface of the silicon slice; diffusing the silicon slice in an oxygen-free environment at a high temperature, diffusing phosphorus not in the top electrode area of the silicon slice into the amorphous silicon layer and further diffusing phosphorus in the phosphorus silicon glass in the top electrode area to the top electrode area; and removing the amorphous silicon layer and the phosphorus silicon glass on the surface of the silicon slice to selectively dope the solar cell by reverse diffusion. By means of reverse diffusion, impurities in a non-top electrode area are absorbed by amorphous silicon, the doping concentration of the non-top electrode area is reduced, the top electrode area is secondarily doped, the doping concentration difference between the top electrode area and the non-top electrode area is further increased, and selective doping effects are improved.

Description

technical field [0001] The invention relates to a selective doping method for solar cells, belonging to the technical field of solar cell manufacturing. Background technique [0002] With the improvement of people's awareness of environmental protection, the demand for clean energy is increasing. Among the new clean energy researched by people, solar energy, as a clean energy that is not subject to geographical restrictions, has become the main direction of new energy development in the future. Solar cells are the main devices that people use the sun's light energy to convert into electrical energy. However, the conversion efficiency of solar cells cannot meet people's requirements at present. Improving the conversion efficiency of solar cells and reducing the manufacturing cost of solar cells has become a research hotspot. [0003] Selectively doped solar cells are an effective low-cost and high-efficiency solar cell. The structural feature of selectively doped solar ce...

Claims

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Application Information

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IPC IPC(8): H01L31/20
CPCH01L21/2252H01L31/1804H01L31/20Y02E10/547Y02P70/50
Inventor 王强花国然朱海峰姚滢邓洁
Owner NANTONG UNIVERSITY
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