Static random access memory unit resisting single event upset

A static random storage, anti-single particle technology, applied in static memory, information storage, digital memory information and other directions, can solve the problems of latch data inversion, data error, etc., to increase the coupling time and reduce the possibility of data inversion The effect of improving the anti-radiation performance

Inactive Publication Date: 2013-05-08
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
View PDF2 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Under the radiation environment, the 6-tube unit with the traditional structure, due to the influence of the radiation effect, especially when a single event event occurs, if any storage node of the latch has a transient flip, it may cause the flip of the latch data , resulting in a data error

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Static random access memory unit resisting single event upset
  • Static random access memory unit resisting single event upset

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0032] In order to make the objectives, technical solutions, and advantages of the present invention clearer, an embodiment of the present invention will be described in detail below with reference to the accompanying drawings. However, the present invention can be implemented in many different forms and should not be limited to the examples given here. The examples are provided to make this disclosure thorough and complete, and to fully convey to those skilled in the art The idea of ​​the present invention.

[0033] Such as figure 2 As shown, figure 2 Shown is a circuit diagram of a static random memory cell resistant to single event flipping according to an embodiment of the present invention. The static random memory cell resistant to single event flipping includes a first differential series voltage switch logic unit 1 and a second differential series voltage switch logic Unit 2, the first PMOS transistor resistor 108, the second PMOS transistor resistor 109, the first ac...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a static random access memory unit resisting single event upset. The static random memory unit resisting the single event upset comprises a first differential series voltage switch logic unit, a second differential series voltage switch logic unit, a first PMOS (P-channel Metal Oxide Semiconductor) transistor resistor, a second PMOS transistor resistor, a first access NMOS (N-channel Metal Oxide Semiconductor) transistor and a second access NMOS transistor, wherein the first access NMOS transistor is connected with the first differential series voltage switch logic unit, the second access NMOS transistor is connected with the second differential series voltage switch logic unit, the first PMOS transistor resistor and the second PMOS transistor resistor are connected between the first differential series voltage switch logic unit and the second differential series voltage switch logic unit in parallel, and the first differential series voltage switch logic unit and the second differential series voltage switch logic unit constitute a cross-coupling latch.

Description

Technical field [0001] The present invention relates to the technical field of integrated circuits, and more specifically to a static random memory cell resistant to single event flipping. Background technique [0002] According to the data storage method, semiconductor memory is divided into dynamic random access memory (DRAM), non-volatile memory and static random access memory (SRAM). Static random access memory can achieve fast operating speed in a simple and low-power consumption manner, and compared with DRAM, SRAM does not need to periodically refresh the stored information, so it is relatively easy to design and manufacture. SRAM has thus established its unique advantages and has been widely used in the field of data storage. However, in the application fields of space and aerospace, radiation effects generated by a large number of high-energy particles and cosmic rays, such as single event flipping, will cause the loss of data in the storage unit, thereby destroying the...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G11C11/413
Inventor 吴利华于芳
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap