Grinding polishing method for wafer

A wafer and grinding technology, applied in the field of chip manufacturing, can solve the problems of poor controllability of the intermediate process, reduced yield, unfavorable environmental protection, etc., and achieve the effects of good mechanical properties, improved yield, and increased production capacity

Active Publication Date: 2013-04-17
WUHAN TELECOMM DEVICES
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] 1. The paraffin wax on the front side remains on the surface of the wafer after unloading, which is difficult to remove;
[0004] 2. Due to the repeated soaking and boiling of chemicals, fragments are prone to appear during the operation;
[0005] 3. Some chemicals such as CCL4 and acetone are poisonous when boiled, and some have potential safety hazards and are not conducive to environmental protection;
[0006] 4. Since the front graphic structure has no protection during the grinding and unloading process, mechanical damage may occur during the grinding and unloading process, which will seriously affect the device performance and reduce the yield;
[0007] 5. The whole process takes a long time, about 4 to 5 hours, and the operation is cumbersome, and most of them are manual operations. The controllability of the intermediate process is poor, and problems cannot be traced;
[0008] 6. The flatness of paraffin wax is poor, and it is easy to cause uneven wafer attachment during the placement process, which affects the flatness of grinding

Method used

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  • Grinding polishing method for wafer

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Effect test

Embodiment 1

[0026] The wafers to be ground and polished are divided into 3 groups, and the following operations are performed respectively:

[0027] 1. Coat the surface of the wafer with a uniform benzocyclobutene (BCB) coating with a thickness of about 10 microns through a SUSS glue spinner.

[0028] 2. Stick the jig (quartz glass) and the benzocyclobutene (BCB) wafer together with a DMT-150ME placement machine.

[0029] 3. Heat the bonded wafer at 270~300°C (the heating temperature of the first group is 270°C, the heating temperature of the second group is 285°C, and the heating temperature of the third group is 300°C), so that the middle benzocyclidine ene (BCB) coated vitrification. In order to obtain its good mechanical properties and good adhesion between wafer and holder (quartz glass).

[0030] 4. Grinding and polishing the wafer.

[0031] 5. After grinding and polishing the wafer stuck on the fixture (quartz glass), put it into the T1100 chemical solvent produced by Dow Chemic...

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Abstract

The invention discloses a grinding polishing method for a wafer and belongs to the technical field of chip manufacture. According to the grinding polishing method for the wafer, benzocyclobutene is adopted for coating the surface of the wafer, the coated wafer is pasted on a clamp, the heating treatment is carried out so that the benzocyclobutene coating is vitrified, next, the wafer is placed into solvents capable of dissolving the benzocyclobutene to be soaked after the grinding polishing is carried out so that the benzocyclobutene coating can automatically slide off from the clamp, finally, the etching is carried out, meanwhile, the residue BCB (benzocyclobutene) is removed, and the clean back side polished wafer is obtained. The method provided by the invention avoids the problems of poor flatness and poor repeatability caused by artificial paraffin wax coating by people, meanwhile, the production process is nontoxic and harmless, the production time is shortened, and the finished product rate is improved.

Description

technical field [0001] The invention relates to the technical field of chip manufacturing, in particular to a wafer grinding and polishing method. Background technique [0002] In the wafer preparation process, the traditional grinding process is to directly stick the wafer to be ground on the fixture (such as quartz glass) with paraffin for back grinding. After the grinding is completed, the wafer is removed from the fixture, and then heated by chemicals (mainly CCL4, acetone or ethanol, etc.) to remove the paraffin wax and impurities generated by grinding. This approach has the following problems: [0003] 1. The paraffin wax on the front side remains on the surface of the wafer after unloading, which is difficult to remove; [0004] 2. Due to the repeated soaking and boiling of chemicals, fragments are prone to appear during the operation; [0005] 3. Some chemicals such as CCL4 and acetone are poisonous when boiled, and some have potential safety hazards and are not c...

Claims

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Application Information

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IPC IPC(8): H01L21/304B24B37/04
Inventor 刘巍王任凡阳红涛刘应军万峰
Owner WUHAN TELECOMM DEVICES
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