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Method for measuring concentration of germanium or/and tin impurity in crystalline silicon

A technology of impurity concentration and measurement method, which is applied in the field of measurement of germanium or/and tin impurity concentration in crystalline silicon, can solve problems such as difficulty in detection of impurity concentration of germanium-tin master alloy, and achieve complex detection methods, cost reduction, and small deviation Effect

Inactive Publication Date: 2013-04-17
LONGI GREEN ENERGY TECH CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The purpose of the present invention is to provide a method for measuring the impurity concentration of germanium or / and tin in crystalline silicon, which solves the problem that the impurity concentration of germanium-tin master alloy is difficult to detect at present

Method used

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  • Method for measuring concentration of germanium or/and tin impurity in crystalline silicon
  • Method for measuring concentration of germanium or/and tin impurity in crystalline silicon
  • Method for measuring concentration of germanium or/and tin impurity in crystalline silicon

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Embodiment 1

[0030] Embodiment 1. The measuring method of germanium or / and tin impurity concentration in crystalline silicon, comprises the steps:

[0031] 1. Add 0.005 grams of boron powder with a purity of 6N-7N and 2000 grams of germanium with a purity of 5N-7N into 150,000 grams of solar-grade polysilicon raw materials, and form a silicon melt through the Czochralski single crystal manufacturing method (CZ method). Body, under the protective atmosphere of argon, the P-type germanium-containing master alloy silicon rod is prepared;

[0032] 2. Cut the germanium-containing master alloy silicon rod in step 1 into germanium-containing master alloy silicon wafers with a thickness of 3 mm by internal circle cutting or multi-wire cutting, and then use the solar-grade silicon material cleaning process to clean the germanium-containing master alloy silicon wafers. surface cleaning;

[0033] 3. Utilize the four-probe method to measure the resistivity ρ of the germanium-containing master alloy s...

Embodiment 2

[0048] Embodiment 2. The measuring method of germanium or / and tin impurity concentration in crystalline silicon, comprises the steps:

[0049] 1. Add 0.005 grams of phosphorus with a purity of 6N-7N and 2000 grams of tin with a purity of 6N-7N into 150,000 grams of solar-grade polysilicon raw materials, and form a silicon melt through the Czochralski single crystal manufacturing method (CZ method). Body, under the protective atmosphere of argon, the N-type tin-containing master alloy silicon rods were prepared;

[0050] 2. Cut the tin-containing master alloy silicon in step 1 into a tin-containing master alloy silicon wafer with a thickness of 1mm by means of internal circle cutting, multi-wire cutting, etc., and then use a solar-grade silicon material cleaning process to clean the tin-containing master alloy Silicon wafer surface cleaning;

[0051] 3. Use the four-probe method to measure the resistivity ρ of the tin-containing master alloy silicon chip obtained in step 2, an...

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Abstract

The invention discloses a method for measuring concentration of germanium or / and tin impurity in crystalline silicon, which comprises the following steps of: doping boron or phosphorus into a germanium or / and tin mother alloy; and determining the concentration of germanium or / and tin by measuring the resistivity of a silicon chip. According to the invention, the phosphorus or boron is doped into the germanium tin mother alloy, the relationship between the resistivity of mother alloy and the concentration of germanium tin impurity is established, and the concentration of the germanium tin impurity can be determined by measuring the resistivity of the mother alloy; and the method is simple and convenient to operate, solves the difficulty in detecting the concentration of current germanium tin mother alloy, reduces the production cost and improves the production efficiency.

Description

technical field [0001] The invention relates to a method for measuring the impurity concentration of germanium or / and tin in crystalline silicon. Background technique [0002] Domestic and foreign studies have shown that in the solar industry, the doping of germanium and tin during the growth of crystalline silicon can significantly improve the performance of the material. Therefore, the doping of germanium and tin impurities in single crystal silicon has a broad application prospect in the solar industry. In the process of large-scale production, the precise control of doping elements is achieved by means of preparing master alloys. Therefore, the development of germanium-tin master alloys is necessary. Due to the fact that germanium and tin impurities do not show electricity in crystalline silicon, the impurity concentration of germanium-tin master alloy cannot be measured by conventional means. At present, SIMS (secondary ion mass spectrometry), ICP-MS, GDMS and other met...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/04G01N1/28
Inventor 张群社祁伟白荣李澍
Owner LONGI GREEN ENERGY TECH CO LTD
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