Compound semiconductor device and method of manufacturing the same

A semiconductor and compound technology, applied in the field of compound semiconductor devices and their manufacturing, can solve problems such as difficulty in fully suppressing current collapse

Active Publication Date: 2013-04-10
FUJITSU LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, only by the aforementioned field plate structure, it is difficult to sufficiently suppress the current collapse phenomenon, and there is a problem that the current collapse occurs remarkably especially during high-voltage operation, which makes a method for further suppressing the current collapse necessary

Method used

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  • Compound semiconductor device and method of manufacturing the same
  • Compound semiconductor device and method of manufacturing the same
  • Compound semiconductor device and method of manufacturing the same

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Experimental program
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Effect test

no. 1 approach

[0044] In this embodiment, a Schottky-type AlGaN / GaN HEMT is disclosed as a compound semiconductor device.

[0045] Figure 1A to Figure 1C and Figure 2A to Figure 2C is a schematic cross-sectional view showing a method of manufacturing the AlGaN / GaN HEMT according to the first embodiment in the order of processes.

[0046] First, if Figure 1A As shown, a compound semiconductor layer 2 having a compound semiconductor stack structure is formed on, for example, a semi-insulating SiC substrate 1 as a growth substrate. As the growth substrate, a SiC substrate, a sapphire substrate, a GaAs substrate, a GaN substrate, or the like can be used instead of the SiC substrate. The conductivity of the substrate can be semi-insulating or conducting.

[0047] The compound semiconductor layer 2 includes a buffer layer 2a, an electron transport layer 2b, an intermediate layer 2c, and an electron supply layer 2d.

[0048] In the completed AlGaN / GaN HEMT, during operation, a two-dimensiona...

no. 2 approach

[0079] Hereinafter, a Schottky-type AlGaN / GaN HEMT according to a second embodiment will be described. Note that the same constituent members and the like as those of the AlGaN / GaN HEMT according to the first embodiment will be denoted by the same reference numerals, and a detailed description thereof will be omitted.

[0080] Figure 4A to Figure 4C is a schematic cross-sectional view showing main processes in the method of manufacturing the AlGaN / GaN HEMT according to the second embodiment.

[0081] First, through the first embodiment of the Figure 1A to Figure 2A In the process, the opening 6a is formed in the SiON film 6, such as Figure 4A shown.

[0082] Subsequently, if Figure 4B As shown, trenches 11 are formed in SiON film 6 and electron supply layer 2d.

[0083] In more detail, photoresist is applied on the entire surface of SiON film 6 (including the upper portion of SiN film 5 exposed from opening 6a), and the photoresist is processed by photolithography. T...

no. 3 approach

[0095] Hereinafter, an MIS-type AlGaN / GaN HEMT according to a third embodiment will be described. Note that the same constituent members and the like as those of the AlGaN / GaN HEMT according to the first embodiment will be denoted by the same reference numerals, and a detailed description thereof will be omitted.

[0096] Figure 5A and Figure 5B is a schematic cross-sectional view showing main processes in the method of manufacturing the AlGaN / GaN HEMT according to the third embodiment.

[0097] First, through the first embodiment of the Figure 1A to Figure 2A In the step, an opening 6a is formed in the SiON film 6, such as Figure 5A shown.

[0098] Subsequently, if Figure 5B As shown, a gate electrode 13 is formed.

[0099] For example, Ni / Au (Ni for the lower layer and Au for the upper layer) is used as the electrode material. For forming electrodes, for example, a double-layer photoresist of an eaves structure suitable for a vapor deposition method and a lift-of...

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Abstract

A HEMT has a compound semiconductor layer, a protection film which has an opening and covers an upper side of the compound semiconductor layer, and a gate electrode which fills the opening and has a shape riding on the compound semiconductor layer, wherein the protection film has a stacked structure of a lower insulating film not containing oxygen and an upper insulating film containing oxygen, and the opening includes a first opening formed in the lower insulating film and a second opening formed in the upper insulating film and wider than the first opening, the first opening and the second opening communicating with each other.

Description

technical field [0001] Embodiments discussed herein relate to compound semiconductor devices and methods of making the same. Background technique [0002] Nitride semiconductor devices have been actively developed as high-withstand-voltage, high-power semiconductor devices by utilizing characteristics of nitride semiconductor devices such as high saturation electron velocity and wide bandgap. A large number of reports have been made on field effect transistors, especially HEMTs (High Electron Mobility Transistors) which are nitride semiconductor devices. In particular, AlGaN / GaN HEMTs using GaN as an electron transport layer and AlGaN as an electron supply layer have attracted attention. In the AlGaN / GaN HEMT, distortion due to a difference in lattice constant between GaN and AlGaN occurs in AlGaN. Due to the piezoelectric polarization induced by the distortion and due to the spontaneous polarization of AlGaN, a high concentration of two-dimensional electron gas (2DEG) is ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/423H01L29/778H01L21/28H01L21/335
CPCH01L29/2003H01L29/66462H01L29/7787
Inventor 多木俊裕冈本直哉美浓浦优一牧山刚三尾崎史朗
Owner FUJITSU LTD
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