Semiconductor device and production method thereof

Abstract

Disclosed is a semiconductor device and a production method thereof. An N-channel metal oxide semiconductor (NMOS) device is covered by a silicon nitride film of a high ultraviolet light absorption coefficient through a Plasma Enhanced Chemical Vapor Deposition (PECVD), the silicon nitride film can absorb ultraviolet light well when the silicon nitride film is subjected to annealing on the laser surface, the dehydrogenation effect is good, the silicon nitride film has high tensile stress after dehydrogenation, a substrate is not required to be heated due to the high ultraviolet light absorption coefficient of the silicon nitride film, the bad effect on the device, which is caused by the facts that the substrate is heated and the dehydrogenation is conducted, can be avoided, and the heat budget brought by a PECVD process.

Description

technical field [0001] The invention relates to the field of semiconductor devices and manufacturing methods thereof, in particular to a structure and method for increasing the tensile stress of a MOS device thin film. Background technique [0002] Starting from the 90nm CMOS integrated circuit process, with the continuous reduction of device feature size, strain channel engineering (Strain Channel Engineering) has played an increasingly important role in order to improve channel carrier mobility. Various uniaxial process-induced stresses are integrated into the device process. Stress films with different properties are covered on NMOS and PMOS to improve carrier mobility in the channel. See attached figure 1 , there are NMOS2 and PMOS3 on the semiconductor substrate 1, and the STI will be isolated on NMOS2 and PMOS3. The NMOS2 is covered with a film 5 with tensile stress, and the PMOS3 is covered with a film 6 with compressive stress. Usually, the stress film is silicon ...

AI Technical Summary

Problems solved by technology

Higher temperature surface annealing discharges more hydrogen, resulting in higher film stress

However, excessive high temperature will cause the loss of the low temperature advantages brought by the PECVD process, which will be unfavorable to the formed MOSFET silicide, source and drain doping and other process structures.

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