D-tartaric acid 2,2-dipyridylamine cobalt ferroelectric function material and preparation method

Abstract

The invention discloses a D-tartaric acid 2,2-dipyridylamine cobalt ferroelectric function material and a preparation method. The molecular formula is [Co(dpa)(D-C4H4O6)]2.8H2O, wherein dpa is 2,2-dipyridylamine; the ferroelectric function material is monoclinic system powder of which the purity is not lower than 99%; the structure of space group is C2; the ferroelectric characteristic parameters are as follows: the remanent polarization strength 2Pr=0.05(mu)C.cm<-2>, coercive electric field 2Ec=15.2kv.cm<-1>, and saturization polarization strength Ps=0.249(mu)c.cm<-2>; and the ferroelectric function material has relatively good ferroelectric characteristics. The preparation method of the ferroelectric function material comprises the following steps of: enabling the newly prepared cobalt carbonate to react with the mixed solution of D-tartaric acid 2,2-dipyridylamine to obtain a D-tartaric acid 2,2-dipyridylamine cobalt solution; devitrifying; and grinding to obtain ferroelectric function material powder passing through a 100-mesh sieve. The method has the advantages of few processes, simple technology, low requirements on equipment, cheap materials of cobalt salt and tartaric acid, no pollution, low cost and easiness in realizing industrialization.

Description

technical field [0001] The invention relates to a ferroelectric functional material, in particular to a D-tartrate 2,2-dipyridylamine cobalt ferroelectric functional material and a preparation method. Background technique [0002] Ferroelectric functional materials have important characteristics such as dielectricity, piezoelectricity, pyroelectricity, ferroelectricity, electro-optic effect, acousto-optic effect, photorefractive effect and nonlinear optical effect, and can be used to make ferroelectric memory, thermal Discharge infrared detectors, spatial light modulators, optical waveguide dielectric phase shifters, voltage-controlled filters and other important new components. These components have broad application prospects in aerospace, communication, home appliances, national defense and other fields. From a crystallographic point of view, only 1(C 1 ), m(C s ), 2(C 2 ), 2m (C 2v ), 3(C 3 ), 3m (C 3v ), 4(C 4 ), 4m (C 4v ), 6(C 6 ), 6m (C 6v ) of 10 polar po...

AI Technical Summary

Problems solved by technology

In the mid-1980s, breakthroughs in thin film preparation technology cleared the way for the preparation of high-quality ferroelectric thin films. In recent years, with the continuous improvement of the requirements for device miniaturization, functional integration, and reliability, the traditional ferroelectric Bulk has been unable to meet the requirements of microelectronic devices due to size constraints

Judging from the current research status, the research, development and application of ferroelectric materials with high performance are still in the development stage.

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