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Deep diffusion process for manufacturing diodes

A deep diffusion and diode technology, applied in the field of deep diffusion process, can solve the problems of difficult handling, affecting electrical properties, complicated and tedious processes, etc., and achieve the effects of saving power costs, saving labor costs, and improving performance

Inactive Publication Date: 2013-03-27
NANTONG HORNBY ELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This process is complicated and cumbersome, time-consuming and labor-intensive. In the traditional process, sandblasting is required before boron expansion. After sandblasting, the silicon powder and impurities on the surface of the silicon wafer are mixed together and adsorbed on the surface, which is not easy to handle. Impurities will diffuse to the PN junction, affecting electrical properties

Method used

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Embodiment Construction

[0008] Concrete steps of the present invention are as follows:

[0009] First, clean the original silicon wafer: place the silicon wafer in mixed acid for 60 seconds, rinse with pure water for 5-10 minutes, then put it into hydrofluoric acid for 5±0.1 minutes, then rinse with pure water at room temperature for 5-10 minutes, then put The silicon wafer is placed in the Harmo powder solution, cleaned with an ultrasonic wave with a frequency of 2.8KHZ for 20±1min, followed by routine rinsing with pure water, then ultrasonically cleaned with hot pure water for 20±1min, and finally rinsed with pure water for 5-10min, and the cleaning is completed. , dehydration is carried out twice with room temperature IPA solution, each dehydration time is 2±0.1 min, and this process is completed.

[0010] The second step, phosphor paper: take out a piece of phosphor paper with tweezers and place it between the first and second silicon wafers on either side of the flower basket, and so on. Place ...

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Abstract

The invention discloses a deep diffusion process for manufacturing diodes. The deep diffusion process for manufacturing the diodes mainly includes the steps of original silicon wafer cleaning, phosphorus paper arrangement, boron coating, double-faced sand blasting, cleaning prior to nickel plating, primary nickel plating, alloy and secondary nickel plating, and is characterized in that boron liquor ratio in the boron coating procedure satisfies that the ratio of glycol ether to diboron trioxide is 10:4, and a high-temperature diffusion procedure is added between boron coating and double-faced sand blasting. The deep diffusion process for manufacturing the diodes saves power cost and labor cost, and performances are improved obviously.

Description

technical field [0001] The invention relates to a deep diffusion process for manufacturing diodes, specifically a process made by the following steps: cleaning of original silicon wafers, phosphorus discharge paper, boron coating, high temperature diffusion, cleaning before nickel plating, cleaning before nickel plating, primary plating Nickel, alloy, secondary nickel plating. This process is suitable for the deep diffusion process of diode manufacturing. Background technique [0002] The traditional diode chip manufacturing process includes the following steps: original silicon wafer cleaning, phosphorus discharge paper, phosphorus expansion, slicing, single-sided sandblasting, cleaning before boron coating, boron coating, boron expansion, double-sided sandblasting, cleaning before nickel plating , Primary nickel plating, alloy, secondary nickel plating. This process is complicated and cumbersome, time-consuming and labor-intensive. In the traditional process, sandblastin...

Claims

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Application Information

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IPC IPC(8): H01L21/228H01L21/329
Inventor 陶小鸥曹孙根
Owner NANTONG HORNBY ELECTRONICS
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