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Surface acoustic wave (SAW) transducer

A surface acoustic wave and transducer technology, applied to electrical components, impedance networks, etc., can solve problems such as unstable performance, atomic migration, and high finger-breaking rate of electrodes

Inactive Publication Date: 2013-03-20
HUAINAN UNITED UNIVERSITY +3
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Chinese patent 201110331789.5 discloses a cubic boron nitride piezoelectric thin film surface acoustic wave device and its preparation method. The multilayer film structure of IDT / c-BN / AL / diamond is used as the piezoelectric substrate, although it can meet the high frequency, High electromechanical coupling coefficient and other requirements, but the adhesion between multilayer films is improved
In addition, the fingers of existing surface acoustic wave transducers are prone to atomic migration, the rate of electrode finger breakage is high, the performance is not stable enough, and the service life needs to be improved.

Method used

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Embodiment

[0025] A surface acoustic wave (SAW) transducer, as shown in the figure, first prepares a diamond film 3 on a silicon substrate by microwave plasma CVD method, and the thickness of the diamond film is 20 μm. The grains are required to be fine, uniform, and dense; the volume ratio of argon, hydrogen, and methane in the CVD method is about 15:4:1, and the flow rate is 600 sccm.

[0026] To polish the surface of the diamond film 3, rough polishing is first performed with diamond micropowder, and then the surface is finely repaired with silicon dioxide as an abrasive, so that the surface roughness of the diamond film 3 is less than 3nm.

[0027] In a high-vacuum sputtering chamber, an Al target is used as a target material to perform high-vacuum magnetron sputtering on the surface of the diamond film 3 to deposit a thin layer of ALN film 4 with a film thickness of 0.3 μm. N high vacuum magnetron sputtering 2 The :Ar volume ratio flow ratio is 9:13, the flow rate is 20 sccm, and t...

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Abstract

The invention discloses a surface acoustic wave transducer which comprises a base and an interdigital transducer electrode, and is characterized in that the base adopts a diamond / ALN (Aluminium Nitride) / AL (Aluminum) / BN (Boron Nitride) multilayer film structure; and the interdigital transducer electrode adopts an AL / ALN double-layer film structure. The surface acoustic wave transducer can meet the requirements that the frequency is high, the propagation loss is low, the electromechanical coupling coefficient is high, and the service life of finger strips is long.

Description

technical field [0001] The invention relates to the technical field of surface acoustic wave devices, in particular to a surface acoustic wave (SAW) transducer with a substrate having a multi-layer film structure and interdigital transducer electrodes having a double-layer film structure. Background technique [0002] Surface Acoustic Wave (SAW) technology is a fringe subject that combines acoustics, electronics, piezoelectric materials and semiconductor planar technology. Since the surface acoustic wave (SAW) works in the radio frequency band, the surface acoustic wave (SAW) transducer has the unique advantages of low electrical-acoustic conversion loss, flexible design and easy fabrication, so it is widely used and is a variety of surface acoustic wave transducers. important part of the device. [0003] With the development of communication technology, the frequency of surface acoustic wave transducers is getting higher and higher. At present, surface acoustic wave (SAW)...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03H9/25
Inventor 朱小萍刘传祥郑庆华
Owner HUAINAN UNITED UNIVERSITY
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