Method and equipment for controlled directional solidification and purification of polycrystalline silicon through taking tailing by graphite tube
A technology of directional solidification and graphite tubes, applied in chemical instruments and methods, silicon compounds, inorganic chemistry, etc., can solve the problems of reduced industrial production costs, high cutting equipment costs, and affecting purification effects, etc. Energy consumption and the effect of reducing process links
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Embodiment 1
[0023] Such as figure 1 The equipment used in the method of directional solidification and purification of polysilicon by graphite tube tailing is shown. The outer wall is composed of a vacuum chamber 2, and a vacuum pipeline 16 is installed on the outer wall. One end of the vacuum pipeline 16 is connected to a vacuum pump group 15.
[0024] A ventilation pipeline 13 is fixedly installed on the outer wall, and a water-cooled support rod 14 is installed movably. The inside of the water-cooled support rod passes cooling water. The water-cooled crucible 17 is installed on the water-cooled support rod, and the cooling water is used for cooling the water-cooled crucible.
[0025] The water cooling plate 12 is movable and sealed at the bottom of the vacuum chamber 2. The graphite plate 11 is placed on the top of the water cooling plate. There are holes on the graphite plate 11. One end of the graphite pillar 10 is nested and connected with the graphite plate 11 through the hole, and ...
Embodiment 2
[0030] Use the equipment described in Example 1 to take the tailings and carry out directional solidification to purify polysilicon. First, add silicon material with a purity of 99.5% to the crucible 7 with 90% of the volume of the crucible, close the ventilation line 13, and turn on the vacuum pump group 15. The vacuum degree in the vacuum chamber 2 is pumped to 10Pa, close the vacuum pump group 15, open the ventilation pipeline, fill the vacuum chamber 2 with 99.93% argon until the pressure reaches 100Pa, and close the ventilation pipeline;
[0031]The second step of smelting and solidification: turn on the power, use the induction coil 5 and the graphite heating element 6 to heat the silicon material in the crucible 7 to 1450 ° C until it is completely melted into a silicon melt, keep it at this temperature for 30 minutes, and pull it vertically downward The water cooling plate 12 makes the silicon melt in the crucible 7 move vertically downward at a constant speed at a spee...
Embodiment 3
[0034] Use the equipment described in Example 1 to take tailings and carry out directional solidification to purify polysilicon. First, add silicon material with a purity of 99.7% to the crucible 7 with a volume of 93% of the crucible, close the ventilation line 13, and turn on the vacuum pump group 15. The vacuum in the vacuum chamber 2 is pumped to 1Pa, the vacuum pump unit 15 is turned off, the ventilation pipeline is opened, and 99.97% argon is filled into the vacuum chamber 2 until the pressure reaches 800Pa, and the ventilation pipeline is closed;
[0035] The second step of smelting and solidification: turn on the power, use the induction coil 5 and the graphite heating element 6 to heat the silicon material in the crucible 7 to 1550 ° C until it is completely melted into a silicon melt, keep it at this temperature for 45 minutes, and pull it vertically downward The water cooling plate 12 makes the silicon melt in the crucible 7 move vertically downward at a constant spe...
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