SOI-LIGBT (Silicon on Insulator-Lateral Insulated-Gate Bipolar Transistor) device based on double channel structure

Abstract

The invention discloses an SOI-LIGBT (Silicon on Insulator-Lateral Insulated-Gate Bipolar Transistor) device based on a double channel structure. The SOI-LIGBT apparatus based on the double channel structure comprises a P type substrate, wherein a buried oxide layer is paved on the P type substrate, an N-epitaxial layer is paved on the buried oxide layer, a P+ collector region is embedded on the N-epitaxial layer, and two symmetrical body region structures are arranged in parallel on the N-epitaxial layer on one side of the P+ collector region. Each body region structure comprises a P well arranged on the N-epitaxial layer, an N+ emitter region embedded on the P well and a P+ contact region penetrating through the P well. According to the SOI-LIGBT device based on the double channel structure provided by the invention, two channel regions are arranged at the emitter region so that the cavity current flowing from the collector to the emitter is uniformly divided into two strands of current, therefore, the current flowing through a base electrode of a parasitic NPN triode is reduced to 50% of the total current. A parasitic thyristor is inhibited from being opened and the anti-latch capacity of the device is improved, so that the reliability of the device is improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductor devices, in particular to an SOI-LIGBT device based on a double-channel structure. Background technique [0002] LIGBT (Lateral Insulated-Gate Bipolar Transistor, Lateral Insulated Gate Bipolar Transistor) is a combination of the advantages of power MOSFET (easy to drive, simple control, fast switching speed) and the advantages of bipolar transistors (large current handling capacity, saturation voltage Reduced, low switching loss) transistors are an indispensable power "core" in the electronics industry, and are widely used in the output stage of power output drive circuits. The SOI (Silicon On Insulator, silicon on insulator) technology is widely used in the manufacture of power integrated circuits due to its ideal dielectric isolation performance. The SOI-LIGBT device is a LIGBT device manufactured based on SOI technology. Since it is completely isolated from the substrate and other high-...

AI Technical Summary

Problems solved by technology

When working with high current, when both transistors T1 and T2 are turned on and positive feedback is formed, a latch-up effect occurs inside the SOI-LIGBT device, causing it to lose its gate control capability, and it is in a high current working state for a long time, eventually causing the device to burn out and fail

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