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Method for making air bridge and inductance

An air bridge and inductor technology, applied in the field of microelectronics, can solve the problems of poor controllability of chlorobenzene, low precision of the air bridge, and complicated process of the sacrificial glue block supporting the air, so as to protect the health and reduce parasitics. effect, the effect of facilitating metal climbing

Inactive Publication Date: 2013-02-06
PEKING UNIV
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Problems solved by technology

The quality of the air bridge made by this method is good, but the process of making the sacrificial rubber block supporting the air is complicated, and if chlorobenzene (carcinogen) is used, and the controllability of the chlorobenzene soaking process is not good, the accuracy of the air bridge is not high

Method used

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  • Method for making air bridge and inductance
  • Method for making air bridge and inductance
  • Method for making air bridge and inductance

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Embodiment Construction

[0044] The present invention will be further described below through specific embodiments and accompanying drawings.

[0045] This embodiment is a manufacturing process of a spiral inductor. In order to avoid the overlapping of the lead wire of the inductor and the coil of the spiral inductor, an air bridge needs to be made. figure 1 For the flow chart of the steps of the method for making the air bridge of this embodiment, the specific instructions are as follows:

[0046] Step 101: Coating photoresist on the substrate to form a first sacrificial adhesive layer, and performing photolithography, exposure, and development on the sacrificial adhesive layer according to the defined pattern of the inductor coil. The undeveloped sacrificial adhesive layer at the metal lead-out line forms an air bridge to support the substrate.

[0047] When coating the sacrificial adhesive layer, it is necessary to cover the metal on the substrate, that is, the lead wire of the inductor. The met...

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Abstract

The invention provides a method for making an air bridge and an inductance. The method mainly comprises the following steps of: making a first sacrifice adhesive layer on a substrate by a photoresist; coating the photoresist on the first sacrifice adhesive layer to make a second sacrifice adhesive layer, wherein the length of the second sacrifice adhesive layer is less than that of the first sacrifice adhesive layer; ensuring the corners of the sacrifice adhesive layers smooth and cured by baking so as to form an arch air bridge supporting substrate; evaporating by an electronic beam to make a seeding layer; and electroplating a metal material layer on the seeding layer; removing the seeding layer by adopting a corroding method and removing the sacrifice adhesive layers by adopting an organic solvent so as to form the air bridge. According to the invention, the photoresist is used to make two sacrifice adhesive layers, so that the performance of the air bridge can be improved, the process efficiency also can be improved and the damage to a device in the making process is reduced; and meanwhile, a highly toxic reagent is also avoided, so that the environment is protected.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, relates to a semiconductor device and an integrated circuit manufacturing process technology, in particular to a method for manufacturing an air bridge, and a method for manufacturing an inductor by using the air bridge. Background technique [0002] With the development of the wireless communication field in recent years and the advancement of military technology applications (such as radar systems, etc.), the requirements for various indicators of microwave power tubes have gradually increased. Because GaN materials have a strong breakdown field and high electron saturation drift velocity, GaN-based devices have more advantages than devices based on traditional semiconductor materials in high-frequency and high-power applications. Such as GaN-based HEMT (High Electron Mobility Transistor) devices, its high output power density makes it possible to use smaller size devices to achieve th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/768H01L21/02
Inventor 张波靳纯艳方敏王金延王茂俊于民解冰吴文刚
Owner PEKING UNIV
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