Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Laser write-through organic thermal etching material and preparation method thereof

A technology of laser direct writing and thermal etching, which is applied in the preparation of organic compounds, photosensitive materials for optomechanical equipment, organic chemistry, etc., can solve the problems of low efficiency, complicated process, and restrictions on wide application, and achieve cost reduction , Simplify the structure of the film layer and the effect of simplifying the process

Active Publication Date: 2014-08-13
HANGZHOU INSTITUTE OF OPTICS AND FINE MECHANICS
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This multilayer film structure is composed of inorganic materials, which needs to be formed by magnetron sputtering or evaporation, and the multilayer film structure itself requires multiple coating processes, which makes the process more complicated and the efficiency is relatively low. , which limits its wide application

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Laser write-through organic thermal etching material and preparation method thereof
  • Laser write-through organic thermal etching material and preparation method thereof
  • Laser write-through organic thermal etching material and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] The preparation method steps of the present embodiment are as follows:

[0029] Weigh the synthetic raw materials in the following percentages by weight:

[0030] 1,2,3-triphenol: 8.4wt%; concentrated hydrochloric acid: 16.8wt%; 4-hydroxybenzaldehyde: 8.1wt%; ethanol: 66.7wt%.

[0031] Dissolve 1,2,3-triphenol in ethanol solution, pass it under the protection of nitrogen, stir and slowly add concentrated hydrochloric acid dropwise, and then slowly add 4-hydroxybenzaldehyde dropwise, at 78 Stirring reaction at ℃ for 12 hours, the reaction formula is as above;

[0032] After the reaction, let stand and cool for 2 hours, the product precipitated from the reaction solution, filtered off the obtained product, and dried in vacuum at 50°C to obtain 2, 8, 14, 20-tetra-4-hydroxybenzene-4, 6, 10 , 12, 16, 18, 22, 24, 25, 26, 27, 28-dodecahydroxycalix[4]arene.

[0033] Electron bombardment mass spectrometry test: theoretical molecular weight C 52 h 40 o 16 :920.23, mass s...

Embodiment 2

[0035] The preparation method steps of the present embodiment are as follows:

[0036] Weigh the synthetic raw materials in the following percentages by weight:

[0037] 1,2,3-triphenol: 5.6wt%; concentrated hydrochloric acid: 22.3wt%; n-heptanal: 5.1wt%; ethanol: 44.7wt%; deionized water: 22.3wt%. .

[0038] Dissolve 1,2,3-triphenol in a solution of ethanol and deionized water, pass it under the protection of nitrogen, stir and slowly add concentrated hydrochloric acid dropwise, and then slowly add n-heptanal dropwise , stirring and reacting at 78°C for 22 hours, the reaction formula is as above;

[0039] After the reaction, let stand and cool for 2 hours, the product is precipitated from the reaction solution, and the obtained product is filtered out, and vacuum-dried at 65°C to obtain 2, 8, 14, 20-tetra-n-hexyl-4, 6, 10, 12 , 16, 18, 22, 24, 25, 26, 27, 28-dodecahydroxycalix[4]arene.

[0040] Electron bombardment mass spectrometry test: theoretical molecular weight C...

Embodiment 3

[0042] The preparation method steps of the present embodiment are as follows:

[0043] Weigh the synthetic raw materials in the following percentages by weight:

[0044] 1,2,3-triphenol: 5.6wt%; concentrated hydrochloric acid: 22.5wt%; 3-cyclohexene-1-carbaldehyde: 4.9wt%; ethanol: 33.5wt%; deionized water: 33.5wt%. .

[0045] Dissolve 1,2,3-triphenol in a solution of ethanol and deionized water, pass it under the protection of nitrogen, stir and slowly add concentrated hydrochloric acid dropwise, and then slowly add 3-cyclohexene-1 - Formaldehyde was added dropwise, stirred and reacted at 78°C for 18 hours, the reaction formula was as above;

[0046] After the reaction was completed, let it stand for cooling for 1 hour, the product was precipitated from the reaction solution, and the obtained product was filtered off, and vacuum-dried at 65°C to obtain 2, 8, 14, 20-tetra-3-cyclohexene-4, 5, 6, 10, 11, 12, 16, 17, 18, 22, 23, 24-Dodecahydroxycalix[4]arene.

[0047] Electr...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
wavelengthaaaaaaaaaa
Login to View More

Abstract

The invention discloses a laser write-through organic thermal etching material and a preparation method thereof. The material is prepared by adopting 2-methyl resorcinol or 1,2,3-trisphenol and aldehydes having condensation reaction under the catalysis of acid. The material is used for laser write-through to prepare convex micrometer or nano-scale pattern structures, no femtosecond laser pulse or multi-layer film structures are needed, and only microsecond pulse or continuous laser and single layer film structures are needed, so that the requirements on laser equipment are reduced, the process is simplified, the cost is reduced, and the efficiency is increased; and in addition, compared with a laser thermal etching inorganic material which is used for producing films by using a magnetron sputtering or evaporation plating method under a high vacuum condition, the organic thermal etching material can be dissolved in organic solvents and can be used for producing films by adopting a simple spinning coating method, so that the cost in making films is further reduced, and the film making efficiency is increased.

Description

technical field [0001] The invention relates to a laser direct writing material, in particular to a laser direct writing organic thermal etching material and a preparation method thereof. The material is composed of calix[4]arene derivatives, and can be used for laser direct writing raised micro- and nano-scale pattern structures. Background technique [0002] In recent years, laser direct writing mapping technology has attracted widespread attention because of its simple equipment, no exposure mask, simple process, and low cost (references: T.C. Chong, M.H. Hong, and L.P. Shi, Laser & Photonics Reviews, 4 (2010 ), 123). Using femtosecond laser pulse direct writing technology, researchers have obtained raised pattern structures of various shapes on the surface of various materials, such as conical, convex and nozzle-shaped pattern structures (Reference 1: Kuznetsov AI, Koch J, Chichkov BN. Appl Phys A 2009;94:221–30; Reference 2: Han ZH, Zhou CH, Dai EW. Chin Opt Lett 2008...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/004C07C39/15C07C39/17C07C39/16C07C37/20
Inventor 邓常猛耿永友吴谊群
Owner HANGZHOU INSTITUTE OF OPTICS AND FINE MECHANICS
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products