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Carbon-doped titanium sapphire crystal and its growing method and application

A crystal growth, titanium sapphire technology, applied in the direction of crystal growth, single crystal growth, single crystal growth, etc., can solve the problems of limited effect and unreachable

Active Publication Date: 2013-01-02
JIANGSU XIEXIN SILICON MATERIAL TECH DEV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

But then, the inventor of the patent EP0241614 found that the effect of using this method to control the valence state of titanium ions or improve the quality factor of titanium sapphire is very limited. The quality factor of the titanium sapphire crystals grown under the environment is not much higher, far from the requirements for practical use (above 150). Therefore, the titanium sapphires grown by this method are still the same as the titanium sapphires grown from the inert growth atmosphere. Must be annealed in a strong reducing atmosphere before use

Method used

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  • Carbon-doped titanium sapphire crystal and its growing method and application

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Effect test

Embodiment 1

[0044] Embodiment 1: Growth of carbon-doped high-quality factor titanium sapphire crystals by crucible descent method

[0045] Put the oriented white gemstone seed crystal in the a-axis (110) direction in the seed crystal groove of the molybdenum crucible 2 in the descending furnace. Titanium sapphire raw materials are high-purity alumina (99.99%) powder and titanium dioxide (99.99%) powder, weigh 3000 grams of powder with a mass ratio of aluminum oxide and titanium dioxide of 100:1, add 1000ppm High-purity graphite (99.99%) powder, after uniform mixing, use 2t / cm 2 (tons per square centimeter) isostatically forged into blocks, pre-sintered at 1700°C in vacuum, and put into molybdenum crucible 2, and place them together on the crucible frame 3 of the descending furnace, and adjust the temperature of molybdenum crucible 2 and graphite heating element 1 distance to ensure that the centers coincide. After the system is sealed, vacuumize to 4×10 -4 Pa, the temperature rises to ...

Embodiment 2

[0047] Put the oriented white gemstone seed crystal in the a-axis (110) direction in the seed crystal groove of the molybdenum crucible 2 in the descending furnace. The raw material of titanium sapphire is high-purity alumina (99.99%) powder and titanium dioxide (99.99%) powder. Weigh 3000 grams of aluminum oxide 100:1 titanium dioxide mass ratio powder, add 3000ppm high-purity graphite (99.99%) powder, after uniform mixing, use 2t / cm 2 isostatic pressing into blocks, pre-fired at 1700°C in vacuum, put into molybdenum crucible 2, put them together on the crucible frame 3 of the descending furnace, adjust the distance between molybdenum crucible 2 and graphite heating element 1, and ensure that the centers overlap. The system is sealed and vacuumed to 3×10 -4 Pa, the temperature is raised to 1550°C. Fill high-purity argon to a positive pressure of 20KPa, continue to heat up to the melting temperature of 2060°C, and keep the temperature constant for 4.5 hours. After the raw ma...

Embodiment 3

[0049] Put the oriented white gemstone seed crystal in the a-axis (110) direction in the seed crystal groove of the molybdenum crucible 2 in the descending furnace. Titanium sapphire raw materials are high-purity alumina (99.99%) powder and titanium dioxide (99.99%) powder, weigh 3000 grams of powder with a mass ratio of aluminum oxide and titanium dioxide of 100:1, add 6000ppm of High-purity graphite (99.99%) powder, after uniform mixing, use 2t / cm 2 (tons per square centimeter) isostatically pressed into blocks, pre-fired at 1700°C in a vacuum, and put into the molybdenum crucible 2, and place them together on the crucible frame 3 of the descending furnace, and adjust the temperature of the molybdenum crucible 2 and the graphite heating element 1 distance, to ensure that the center coincides, the system is airtight, and the vacuum is pumped to 2×10 -4 Pa, the temperature is raised to 1500°C. Fill high-purity argon until the pressure is positive pressure 25KPa, continue to ...

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Abstract

The invention relates to a carbon-doped titanium sapphire crystal and its growing method and application. The growing method includes adding 1,000-10,000 ppm graphite powder in the titanium sapphire raw material, performing growth of the carbon-doped titanium sapphire crystal by Bridgman-Stockbarger method, and performing in situ annealing on the grown crystal at 1,700-1,900 DEG C. for 40-56 h; and cooling the crystal after annealing at a slow rate of 15-30 DEG C. / h to room temperature. The inventive carbon-doped titanium sapphire crystal has residual infrared absorption coefficient reduced to 0.01-0.001 cm<-1> at normal temperature of 25 DEG C., quality factor FOM of more than 200, and high optical uniformity, and is applied to solid tunable laser.

Description

technical field [0001] The invention relates to a titanium sapphire crystal growth technology in the field of laser materials, in particular to a carbon-doped titanium sapphire crystal with low residual infrared absorption coefficient and high quality factor and a growth method thereof. Background technique [0002] In the early 1980s, solid-state tunable lasers developed rapidly, and tunable lasers such as titanium sapphire and chrysoberyl appeared successively, among which the research on titanium sapphire was particularly prominent. [0003] Titanium sapphire (Ti:Al 2 o 3 ) crystal is a tunable laser crystal material with excellent performance and has a wide range of applications. Titanium sapphire crystal is a laser crystal material with greater influence after Nb YAG. Ti:Sapphire laser has the characteristics of wide tuning range, high conversion efficiency, long life and multiple pump sources, and is widely used in environmental pollution monitoring, military applic...

Claims

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Application Information

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IPC IPC(8): C30B29/20C30B29/22C30B11/00
Inventor 徐军李红军唐慧丽王静雅胡克艳
Owner JIANGSU XIEXIN SILICON MATERIAL TECH DEV
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