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Method for preparing silicon carbide coating on graphite surface

A silicon carbide coating and graphite technology, applied in the field of high-performance graphite coating, can solve the problems of short service life, cracking and coating failure of silicon carbide coated graphite, avoiding thermal mismatch, firm bonding and no cracking Effect

Active Publication Date: 2013-01-02
XIAN CHAOMA SCI TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At present, SiC coated graphite has the following problems: (1) Bonding strength, due to the difference in expansion coefficient between graphite substrate and silicon carbide, the SiC coating prepared by traditional CVD process often cracks, resulting in coating failure; (2) Service life, due to the difference in bonding strength, the service life of silicon carbide coated graphite is short, generally 100 heats / piece

Method used

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  • Method for preparing silicon carbide coating on graphite surface
  • Method for preparing silicon carbide coating on graphite surface
  • Method for preparing silicon carbide coating on graphite surface

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] Step 1. Place the graphite crucible with solid silicon material in a high-temperature graphitization furnace, place the graphite substrate on the graphite support in the graphite crucible, and keep it warm for 1 hour at a temperature of 1500°C and a vacuum of 100Pa. Silicon vapor reacts directly with the carbon on the surface of the graphite substrate to form a layer of silicon carbide coating (CVR silicon carbide coating); the amount of the solid silicon material is measured by the external area of ​​the graphite substrate, and the external area of ​​the graphite substrate per square centimeter is measured by the solid silicon material 5g;

[0020] Step 2. Place the graphite substrate with a silicon carbide coating on the surface in step 1 in a chemical vapor deposition furnace, and feed hydrogen and dilution gas into the furnace at a temperature of 1000 ° C, and use the bubbling gasification method Pass trichloromethylsilane into the furnace after being vaporized, kee...

Embodiment 2

[0024] Step 1. Place the graphite crucible containing solid silicon material in a high-temperature graphitization furnace, place the graphite substrate on the graphite support in the graphite crucible, and keep it warm for 5 hours at a temperature of 1500 ° C and a vacuum of 100 Pa. Use Silicon vapor reacts directly with the carbon on the surface of the graphite substrate to form a layer of silicon carbide coating (CVR silicon carbide coating); the amount of the solid silicon material is measured by the external area of ​​the graphite substrate, and the external area of ​​the graphite substrate per square centimeter is measured by the solid silicon material 20g;

[0025] Step 2. Place the graphite substrate with a silicon carbide coating on the surface in step 1 in a chemical vapor deposition furnace, and feed hydrogen and dilution gas into the furnace at a temperature of 1000 ° C, and use the bubbling gasification method Pass trichloromethylsilane into the furnace after being...

Embodiment 3

[0028] Step 1. Place the graphite crucible with solid silicon material in a high-temperature graphitization furnace, place the graphite substrate on the graphite support in the graphite crucible, and keep it warm for 1 hour at a temperature of 1650°C and a vacuum of 500Pa. Use Silicon vapor reacts directly with the carbon on the surface of the graphite substrate to form a layer of silicon carbide coating (CVR silicon carbide coating); the amount of the solid silicon material is measured by the external area of ​​the graphite substrate, and the external area of ​​the graphite substrate per square centimeter is measured by the solid silicon material 10g;

[0029] Step 2. Place the graphite substrate with a silicon carbide coating on the surface in step 1 in a chemical vapor deposition furnace, and feed hydrogen and dilution gas into the furnace at a temperature of 1100 ° C, and use the bubbling gasification method After trichloromethylsilane is gasified, it is passed into the fu...

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Abstract

The invention discloses a method for preparing a silicon carbide coating on a graphite surface. The method includes, firstly, placing a graphite crucible containing solid silicone materials in a high temperature graphitizing furnace and placing a graphite base body on a graphite support in the graphite crucible to generate a silicon carbide coating by means of direct reaction of silicon steam and carbon on the surface of the graphite base body; and secondly, placing the graphite base body which generates the silicon carbide coating on the surface in a chemical vapor deposition (CVD) furnace to be pyrolyzed on the surface of the silicon carbide coating which is located on the surface of the graphite base body to generate a CVD silicon carbide coating. According to the method for preparing the silicon carbide coating on the graphite surface, by means of the direct reaction of the silicon steam formed by heating the solid silicone materials and the carbon on the surface of the graphite base body, an in-situ formed chemical vapor reaction (CVR) silicon carbide coating is firmly combined on the graphite base body so that combination intensity is improved; and then a CVD process is used for pyrolyzing the CVR silicon carbide coating at high temperatures on the CVD silicon carbide coating so that pore space of the CVR silicon carbide coating is effectively filled, and combination strength is improved.

Description

technical field [0001] The invention belongs to the technical field of high-performance graphite coatings, in particular to a method for preparing silicon carbide coatings on graphite surfaces. Background technique [0002] Epitaxial technology and equipment are the key to semiconductor epitaxial wafer manufacturing technology. Metal organic chemical vapor deposition (MOCVD) is the main method for growing thin-layer single crystals of III-V, II-VI compounds and alloys (such as GaN, etc.). In MOCVD equipment, the reaction bases used are SiC-coated graphite materials. At present, SiC coated graphite has the following problems: (1) Bonding strength, due to the difference in expansion coefficient between graphite substrate and silicon carbide, the SiC coating prepared by traditional CVD process often cracks, resulting in coating failure; (2) Due to the difference in bonding strength, the service life of silicon carbide coated graphite is short, generally 100 heats / piece. Cont...

Claims

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Application Information

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IPC IPC(8): C04B41/85
Inventor 张永辉肖志超苏君明彭志刚侯卫权
Owner XIAN CHAOMA SCI TECH
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