Double heterostructure GaN-based high electron mobility transistor structure and fabrication method

Abstract

A double-heterostructure GaN-based high-electron mobility transistor structure comprises: a substrate; a nucleating layer prepared on the substrate; an unpurposed doped high resistance layer prepared on the nucleating layer; an unpurposed doped inserting layer prepared on the unpurposed doped high resistance layer; an unpurposed doped high mobility layer prepared on the unpurposed doped inserting layer; an unpurposed doped aluminum nitride inserting layer prepared on the high mobility layer; an unpurposed doped ALGaN barrier layer prepared on the unpurposed doped aluminum nitride inserting layer; and an unpurposed doped GaN capping layer prepared on the unpurposed doped ALGaN barrier layer.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, in particular to a double-heterostructure gallium nitride-based high electron mobility transistor structure and manufacturing method, the transistor uses high resistance aluminum gallium nitrogen with low aluminum composition as a buffer layer, and A thin aluminum nitride insertion layer is introduced on both sides of the gallium nitride channel layer. The high-resistance aluminum gallium nitride as a buffer layer can reduce the leakage of channel electrons in the buffer layer and improve the breakdown voltage of the device. The thin aluminum nitride insertion layer can Reduce the alloy scattering of electrons and improve the channel electron mobility. Background technique [0002] As a typical representative of the third-generation wide-bandgap semiconductor, gallium nitride has excellent physical and chemical properties, and is very suitable for the development of high-frequency, high-vo...

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Problems solved by technology

However, replacing the high-resistance gallium nitride buffer layer with an aluminum gallium nitride high-resistance buffer layer, although the aluminum composition is very low (generally below 5%), it will still greatly reduce the electron mobility. Using gallium nitride as the high-resistance The high electron mobility transistor material developed by the buffer layer, the room temperature channel electron mobility is generally greater than 2000cm 2 / Vs, while using high-resistance AlGaN as the material of the high-resistance buffer layer, the electron mobility at room temperature can generally only be greater than 1500cm 2 / Vs, so the potential of epitaxial materials with this structure in the development of devices and circuits is also quite controversial

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