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Erbium ion activated 3-micron wave-band gallate laser crystal and its preparation method

A laser crystal and crystal-like technology, applied in crystal growth, chemical instruments and methods, single crystal growth, etc., can solve the problem of poor energy storage characteristics, unsatisfactory laser output performance in the 3 micron band, absorption band and fluorescence emission spectrum Bandwidth and other issues

Active Publication Date: 2012-11-07
FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there are still many shortcomings in the existing laser materials in this band, and the output performance of the 3 micron band laser still fails to meet the needs of many practical applications.
For example, Er:YAG crystal, which has been commercialized at present, is a relatively excellent laser host crystal in the 3 micron band, but there are also problems such as poor energy storage characteristics, absorption bands and fluorescence emission bands due to the short fluorescence lifetime of the upper laser level. Narrow and other shortcomings that are not conducive to semiconductor laser pumping, Q-switching, and mode-locked pulse laser output

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] Weigh 21.52g of Er 2 o 3 , 55.36g of SrCO 3 , 47.58g of Gd 2 o 3 and 106.49 g of Ga 2 o 3 , put these four kinds of raw materials together in an agate mortar, grind and mix evenly, press the mixture into a round cake with a Φ50mm forming mold and a hydraulic press in three times, and place it in a muffle furnace at 1050 o C sintered for 48 hours. Then put the product synthesized by solid phase reaction into Φ60×30mm 3 The iridium crucible is placed in a crystal pulling growth furnace and heated and melted. The growth conditions are: melting temperature 1600 o About C, pulling speed 1.0mm / h, rotating speed 15rpm, annealing cooling rate 10 o C / h. Grow to get a size larger than Φ25×40mm 3 High quality transparent single crystal Er 0.3 :SrGd 0.7 Ga 3 o 7 . The half-maximum width of the absorption band near 970nm of the crystal reaches nearly 30nm, which is suitable for semiconductor laser pumping and outputs 3 micron band laser.

Embodiment 2

[0023] Weigh 21.52g of Er 2 o 3 , 74g BaCO 3 , 42.76g of La 2 o 3 and 106.49 g of Ga 2 o 3 , put these four kinds of raw materials together in an agate mortar, grind and mix evenly, press the mixture into a round cake with a Φ50mm forming mold and a hydraulic press in three times, and place it in a muffle furnace at 1050 o C sintered for 48 hours. Then put the product synthesized by solid phase reaction into Φ60×30mm 3 The iridium crucible is placed in a crystal pulling growth furnace and heated and melted. The growth conditions are: melting temperature 1650 o About C, pulling speed 1.2mm / h, rotating speed 15rpm, annealing cooling rate 20 o C / h. Grow to get a size larger than Φ20×40mm 3 High quality transparent single crystal Er 0.3 :BaLa 0.7 Ga 3 o 7 .

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PUM

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Abstract

The invention provides an erbium ion activated 3-micron wave-band gallate laser crystal and its preparation method. The chemical formula of the crystal is Erx:AR(1-x)Ga3O7, wherein A is at least one of Ca, Sr and Ba; R is at least one of Y, La, Gd and Lu; and the value of x changes from 0 to 1 according to laser operation requirements. The crystal can be pumped by diode laser to output 3-micron wave-band laser. The crystal can grow by a czochralski method. The preparation method requires a simple process and is easy to operate.

Description

[0001] technical field [0002] The invention relates to a class of erbium ion-activated gallate laser crystals in the 3 micron band and a preparation method thereof. Background technique [0003] The 3-micron band laser has important application value in the fields of medicine, military affairs, special gas detection, and nonlinear optics. Erbium ion 4 I 11 / 2 arrive 4 I 13 / 2 Transition to achieve laser output is one of the ideal ways to directly obtain high-beam quality and high-performance lasers in the 3-micron band. However, the existing laser materials in this band still have many shortcomings, and the output performance of lasers in the 3 micron band still cannot meet the needs of many practical applications. For example, Er:YAG crystal, which has been commercialized at present, is a relatively excellent laser host crystal in the 3 micron band, but there are also problems such as poor energy storage characteristics, absorption bands and fluorescence emission bands...

Claims

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Application Information

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IPC IPC(8): C30B29/22C30B15/00H01S3/16
Inventor 龚兴红黄艺东陈雨金林炎富黄建华罗遵度
Owner FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI
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